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BTS432D2E3062A

更新时间： 2024-01-27 12:28:43

品牌	Logo	应用领域
英飞凌 - INFINEON		外围驱动器驱动程序和接口开关接口集成电路电源开关
页数	文件大小	规格书
14页	187K
描述
Smart Highside Power Switch

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技术参数
数据手册

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BTS432D2E3062A 技术参数

生命周期：	Transferred	Reach Compliance Code：	unknown
风险等级：	5.07	Is Samacsys：	N
内置保护：	OVER CURRENT; OVER VOLTAGE; THERMAL; UNDER VOLTAGE	输入特性：	SCHMITT TRIGGER
接口集成电路类型：	BUFFER OR INVERTER BASED PERIPHERAL DRIVER	JESD-30 代码：	R-PSSO-G4
功能数量：	1	端子数量：	4
输出特性：	OPEN-SOURCE	输出电流流向：	SOURCE
标称输出峰值电流：	44 A	输出极性：	TRUE
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	认证状态：	Not Qualified
表面贴装：	YES	技术：	MOS
端子形式：	GULL WING	端子位置：	SINGLE
断开时间：	80 µs	接通时间：	300 µs
Base Number Matches：	1

BTS432D2E3062A 数据手册

PROFET BTS 432 D2

Smart Highside Power Switch

Features

Product Summary

)

Load dump and reverse battery protection

Clamp of negative voltage at output

Short-circuit protection

Current limitation

Thermal shutdown

Diagnostic feedback

Open load detection in ON-state

CMOS compatible input

Electrostatic discharge (ESD) protection

Loss of ground and loss of V protection

Load dump

V -V_OUTAvalanche Clamp

4.5 ... 42

-32

bb (operation)

bb (reverse)

L(SCp)

L(SCr)

L(ISO)

Overvoltage protection

Undervoltage and overvoltage shutdown with auto-

restart and hysteresis

Straight leads

SMD

Standard

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic

feedback, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection

functions.

+ V

Voltag

source

Gate

Overvoltag

protectio

Curren

limit

protectio

V _Logic

OUT

Charge

Level

Limit for

unclampe

ind.

Voltag

sensor

Temperatur

sensor

Rectifie

Open

Load

Logic

ESD

detectio

Short

detectio

PROF

GND

Load GND

Signal GND

No external components required, reverse load current limited by connected load.

Additional external diode required for charged inductive loads

Infineon Technologies AG

Page 1 of 14

1999-03-22

12 3 4 5 6 7...14

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