BTS430K2

更新时间： 2024-01-23 14:38:19

品牌	Logo	应用领域
英飞凌 - INFINEON		外围驱动器驱动程序和接口开关接口集成电路电源开关局域网
页数	文件大小	规格书
13页	119K
描述
Smart Highside Power Switch (Clamp of negative voltage at output Short-circuit protection Current limitation)

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技术参数
数据手册

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BTS430K2 技术参数

生命周期：	Transferred	包装说明：	,
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8542.39.00.01	风险等级：	5.35
内置保护：	OVER CURRENT; OVER VOLTAGE; THERMAL; UNDER VOLTAGE	输入特性：	SCHMITT TRIGGER
接口集成电路类型：	BUFFER OR INVERTER BASED PERIPHERAL DRIVER	JESD-30 代码：	R-PSFM-T5
功能数量：	1	端子数量：	5
输出特性：	OPEN-SOURCE	输出电流流向：	SOURCE
标称输出峰值电流：	36 A	输出极性：	TRUE
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	认证状态：	Not Qualified
最大供电电压：	32 V	最小供电电压：	4.5 V
标称供电电压：	12 V	表面贴装：	NO
技术：	MOS	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	断开时间：	60 µs
接通时间：	260 µs	Base Number Matches：	1

BTS430K2 数据手册

PROFET BTS 430 K2

Smart Highside Power Switch

Features

Product Summary

•

Clamp of negative voltage at output

_OUTAvalanche Clamp

bb (operation)

bb (reverse)

4.5 ... 32

-32

Short-circuit protection

Current limitation

Thermal shutdown

Diagnostic feedback

Open load detection in ON-state

CMOS compatible input

Electrostatic Discharge (ESD) protection

Loss of ground and loss of V protection

Reverse battery protection

mΩ

L(lim)

L(ISO)

Undervoltage and overvoltage shutdown with auto-restart and hysteresis

Application

•

µC compatible power switch with diagnostic feedback

for 12 V and 24 V DC grounded loads

All types of resistive, inductive and capacitve loads

Replaces electromechanical relays and discrete circuits

•

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic fault

feedback, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection

functions.

+ V

Vo lta g e

so urc e

Ga te

Ove rvo lta g e

p ro te c tio n

Curre nt

lim it

p ro te c tio n

Logic

OUT

Lim it fo r

unc la m p e d

ind . lo a d s

Cha rg e p um p

Le ve l shifte r

Vo lta g e

se nso r

Te m p e ra ture

se nso r

Re c tifie r

Op e n c irc uit

d e te c tio n

Load

Lo g ic

ESD

Sho rt c irc uit

d e te c tio n

PROFET

GND

Load GND

Signal GND

Additional external diode required for charged inductive loads

Semiconductor Group

04.96

12 3 4 5 6 7...13

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