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BTS412B2E3043 PDF预览

BTS412B2E3043

更新时间: 2024-01-14 01:56:44
品牌 Logo 应用领域
英飞凌 - INFINEON 外围驱动器驱动程序和接口开关接口集成电路电源开关局域网
页数 文件大小 规格书
14页 174K
描述
Smart Highside Power Switch

BTS412B2E3043 技术参数

生命周期:Transferred零件包装代码:TO-220AB
包装说明:,针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.34
Is Samacsys:N内置保护:OVER CURRENT; OVER VOLTAGE; THERMAL; UNDER VOLTAGE
输入特性:SCHMITT TRIGGER接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 代码:R-PSFM-T5功能数量:1
端子数量:5输出特性:OPEN-SOURCE
输出电流流向:SOURCE标称输出峰值电流:12 A
输出极性:TRUE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
认证状态:Not Qualified最大供电电压:42 V
最小供电电压:4.7 V标称供电电压:12 V
表面贴装:NO技术:MOS
端子形式:THROUGH-HOLE端子位置:SINGLE
断开时间:85 µs接通时间:125 µs
Base Number Matches:1

BTS412B2E3043 数据手册

 浏览型号BTS412B2E3043的Datasheet PDF文件第2页浏览型号BTS412B2E3043的Datasheet PDF文件第3页浏览型号BTS412B2E3043的Datasheet PDF文件第4页浏览型号BTS412B2E3043的Datasheet PDF文件第5页浏览型号BTS412B2E3043的Datasheet PDF文件第6页浏览型号BTS412B2E3043的Datasheet PDF文件第7页 
®
PROFET BTS 412B2  
Smart Highside Power Switch  
Features  
Product Summary  
Overload protection  
Overvoltage protection  
Vbb(AZ)  
65  
V
Current limitation  
Short circuit protection  
Thermal shutdown  
Overvoltage protection (including load dump)  
Fast demagnetization of inductive loads  
Reverse battery protection  
Undervoltage and overvoltage shutdown with  
auto-restart and hysteresis  
V
4.7 ... 42 V  
Operating voltage  
On-state resistance  
Load current (ISO)  
Current limitation  
bb(on)  
R
ON  
220  
m  
I
I
1.8  
5
A
A
L(ISO)  
L(SCr)  
1
)
TO-220AB/5  
CMOS diagnostic output  
Open load detection in OFF-state  
CMOS compatible input  
Loss of ground and loss of V protection  
Electrostatic discharge (ESD) protection  
5
5
bb  
5
1
1
Straight leads  
Standard  
SMD  
Application  
µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads  
All types of resistive, inductive and capacitve loads  
Replaces electromechanical relays, fuses and discrete circuits  
General Description  
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic  
feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection  
functions.  
+ V  
bb  
3
Vo lta g e  
so urc e  
Ga te  
Ove rvo lta g e  
p ro te c tio n  
Curre nt  
lim it  
p ro te c tio n  
V
Logic  
OUT  
Lim it fo r  
unc la m p e d  
ind . lo a d s  
Cha rg e p um p  
Le ve l shifte r  
Vo lta g e  
se nso r  
5
Te m p e ra ture  
se nso r  
Re c tifie r  
IN  
2
Op e n lo a d  
d e te c tio n  
Load  
Lo g ic  
ESD  
4
ST  
Sho rt c irc uit  
d e te c tio n  
PROFET  
GND  
1
Load GND  
Signal GND  
1)  
With external current limit (e.g. resistor R =150 ) in GND connection, resistor in series with ST  
GND  
connection, reverse load current limited by connected load.  
Semiconductor Group  
1
03.97  

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