5秒后页面跳转
BTS410F2E3062A PDF预览

BTS410F2E3062A

更新时间: 2024-02-16 03:30:52
品牌 Logo 应用领域
英飞凌 - INFINEON 外围驱动器驱动程序和接口开关接口集成电路电源开关
页数 文件大小 规格书
15页 317K
描述
Smart Highside Power Switch

BTS410F2E3062A 技术参数

生命周期:Transferred零件包装代码:TO-220AB
包装说明:,针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.26
内置保护:OVER CURRENT; OVER VOLTAGE; THERMAL; UNDER VOLTAGE输入特性:SCHMITT TRIGGER
接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVERJESD-30 代码:R-PSSO-G4
功能数量:1端子数量:4
输出特性:OPEN-SOURCE输出电流流向:SOURCE
标称输出峰值电流:5.5 A输出极性:TRUE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE认证状态:Not Qualified
最大压摆率:2.1 mA最大供电电压:42 V
最小供电电压:4.7 V标称供电电压:12 V
表面贴装:YES技术:MOS
端子形式:GULL WING端子位置:SINGLE
断开时间:85 µs接通时间:125 µs
Base Number Matches:1

BTS410F2E3062A 数据手册

 浏览型号BTS410F2E3062A的Datasheet PDF文件第2页浏览型号BTS410F2E3062A的Datasheet PDF文件第3页浏览型号BTS410F2E3062A的Datasheet PDF文件第4页浏览型号BTS410F2E3062A的Datasheet PDF文件第5页浏览型号BTS410F2E3062A的Datasheet PDF文件第6页浏览型号BTS410F2E3062A的Datasheet PDF文件第7页 
®
PROFET BTS 410 F2  
Smart Highside Power Switch  
Features  
Product Summary  
Overload protection  
Current limitation  
Short circuit protection  
Thermal shutdown  
Overvoltage protection (including load dump)  
Fast demagnetization of inductive loads  
Reverse battery protection  
Undervoltage and overvoltage shutdown with  
auto-restart and hysteresis  
Overvoltage protection  
Vbb(AZ)  
65  
V
V
4.7 ... 42 V  
Operating voltage  
On-state resistance  
Load current (ISO)  
Current limitation  
bb(on)  
R
220  
1.8  
2.7  
mΩ  
A
ON  
I
I
L(ISO)  
L(SCr)  
1
)
A
Open drain diagnostic output  
Open load detection in ON-state  
CMOS compatible input  
TO-220AB/5  
5
5
Loss of ground and loss of V protection  
bb  
5
Electrostatic discharge (ESD) protection  
1
1
Straight leads  
Standard  
SMD  
Application  
µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads  
Most suitable for inductive loads  
Replaces electromechanical relays, fuses and discrete circuits  
General Description  
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic  
feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.  
+ V  
bb  
3
Voltage  
source  
Gate  
protection  
Overvoltage  
protection  
Current  
limit  
VLogic  
OUT  
Limit for  
Charge pump  
Level shifter  
Voltage  
sensor  
unclamped  
ind. loads  
5
Temperature  
sensor  
Rectifier  
IN  
2
4
Open load  
detection  
Load  
Logic  
ESD  
ST  
Short circuit  
detection  
PROFET  
GND  
1
Load GND  
Signal GND  
1
)
With external current limit (e.g. resistor R =150 ) in GND connection, resistors in series with IN and ST  
GND  
connections, reverse load current limited by connected load.  
Semiconductor Group  
1 of 15  
2003-Oct-01  

与BTS410F2E3062A相关器件

型号 品牌 描述 获取价格 数据表
BTS410F2E3062ABUMA1 INFINEON Buffer/Inverter Based Peripheral Driver, 1 Driver, 1.8A, MOS, PSSO4, GREEN, PLASTIC, TO-26

获取价格

BTS410F2SMD INFINEON 暂无描述

获取价格

BTS410FE3040 ETC MOSFET Driver

获取价格

BTS410FE3043 INFINEON MOSFET Driver, MOS

获取价格

BTS410FE3062 ETC MOSFET Driver

获取价格

BTS410F-E3062 INFINEON MOSFET Driver, MOS,

获取价格