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BTS3410G PDF预览

BTS3410G

更新时间: 2024-02-05 11:21:15
品牌 Logo 应用领域
英飞凌 - INFINEON 外围驱动器驱动程序和接口开关接口集成电路电源开关光电二极管PC
页数 文件大小 规格书
11页 318K
描述
Smart Dual Lowside Power Switch

BTS3410G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:SOP, SOP8,.25针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:1.11
Samacsys Confidence:3Samacsys Status:Released
2D Presentation:https://componentsearchengine.com/2D/0T/920948.1.1.pngSchematic Symbol:https://componentsearchengine.com/symbol.php?partID=920948
PCB Footprint:https://componentsearchengine.com/footprint.php?partID=9209483D View:https://componentsearchengine.com/viewer/3D.php?partID=920948
Samacsys PartID:920948Samacsys Image:https://componentsearchengine.com/Images/9/BTS3410G.jpg
Samacsys Thumbnail Image:https://componentsearchengine.com/Thumbnails/1/BTS3410G.jpgSamacsys Pin Count:8
Samacsys Part Category:Integrated CircuitSamacsys Package Category:Small Outline Packages
Samacsys Footprint Name:PG-DSO-8_1Samacsys Released Date:2018-07-31 07:10:40
Is Samacsys:N内置保护:TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL
驱动器位数:2接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
长度:5 mm湿度敏感等级:3
功能数量:2端子数量:8
输出电流流向:SINK标称输出峰值电流:7.5 A
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
电源:12 V认证状态:Not Qualified
座面最大高度:1.75 mm子类别:Peripheral Drivers
标称供电电压:12 V表面贴装:YES
技术:MOS端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
断开时间:100 µs接通时间:100 µs
宽度:4 mmBase Number Matches:1

BTS3410G 数据手册

 浏览型号BTS3410G的Datasheet PDF文件第2页浏览型号BTS3410G的Datasheet PDF文件第3页浏览型号BTS3410G的Datasheet PDF文件第4页浏览型号BTS3410G的Datasheet PDF文件第5页浏览型号BTS3410G的Datasheet PDF文件第6页浏览型号BTS3410G的Datasheet PDF文件第7页 
HITFET BTS 3410 G  
Smart Dual Lowside Power Switch  
Features  
Product Summary  
S Logic Level Input  
S Input Protection (ESD)  
S Thermal shutdown with  
auto restart  
Drain source voltage  
On-state resistance  
Nominal load current  
Clamping energy  
V
R
42  
200 mꢀ  
1.3  
150 mJ  
V
DS  
DS(on)  
I
A
D(Nom)  
E
AS  
S Overload protection  
S Short circuit protection  
S Overvoltage protection  
S Current limitation  
S Analog driving possible  
Application  
S All kinds of resistive, inductive and capacitive loads in switching  
or linear applications  
S µC compatible power switch for 12 V DC applications  
S Replaces electromechanical relays and discrete circuits  
General Description  
N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded  
protection functions.  
Vbb  
M
Drain1  
HITFET  
Pin 7and 8  
In1  
Logic  
Pin 2  
Channel 1  
Pin 1  
Source1  
Drain2  
Pin 5and 6  
In2  
Logic  
Pin 4  
Channel 2  
Pin 3  
Source2  
Complete product spectrum and additional information http://www.infineon.com/hitfet  
Page 1  
2004-03-05  

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