BTS149

更新时间： 2024-02-01 20:45:37

品牌	Logo	应用领域
英飞凌 - INFINEON		外围驱动器驱动程序和接口开关电源开关
页数	文件大小	规格书
10页	308K
描述
Smart Lowside Power Switch

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技术参数
数据手册

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BTS149 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8542.39.00.01	风险等级：	5.83
内置保护：	OVER CURRENT; OVER VOLTAGE; THERMAL	输入特性：	SCHMITT TRIGGER
接口集成电路类型：	BUFFER OR INVERTER BASED PERIPHERAL DRIVER	JESD-30 代码：	R-PSFM-T3
功能数量：	1	端子数量：	3
输出特性：	OPEN-DRAIN	输出电流流向：	SINK
标称输出峰值电流：	40 A	输出极性：	TRUE
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	认证状态：	Not Qualified
表面贴装：	NO	技术：	MOS
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
断开时间：	170 µs	接通时间：	100 µs
Base Number Matches：	1

BTS149 数据手册

=

HITFET BTS 149

Smart Lowside Power Switch

Features

• Logic Level Input

Product Summary

Drain source voltage

On-state resistance

Current limit

Nominal load current

Clamping energy

mΩ

• Input Protection (ESD)

•=Thermal shutdown with latch

• Overload protection

• Short circuit protection

• Overvoltage protection

• Current limitation

DS(on)

D(lim)

D(ISO)

6000 mJ

• Status feedback with external input resistor

• Analog driving possible

Application

• All kinds of resistive, inductive and capacitive loads in switching or

linear applications

• µC compatible power switch for 12 V and 24 V DC applications

• Replaces electromechanical relays and discrete circuits

General Description



N channel vertical power FET in Smart SIPMOS chip on chip tech-

nology. Fully protected by embedded protected functions.

LOAD

Drain

Overvoltage

protection

Current

limitation

dv/dt

limitation

Over-

Overload

protection

Short circuit

temperature

ESD

protection

Source

HITFET

Page 1

2004-02-02

12 3 4 5 6 7...10

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