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BTS134D PDF预览

BTS134D

更新时间: 2024-02-29 14:14:17
品牌 Logo 应用领域
英飞凌 - INFINEON 外围驱动器驱动程序和接口接口集成电路
页数 文件大小 规格书
10页 356K
描述
HITFET II.Generation BTS 134 D

BTS134D 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-252
包装说明:TO-252,针数:4
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.64
内置保护:TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 代码:R-PSSO-G2长度:6.5 mm
功能数量:1端子数量:2
输出电流流向:SINK标称输出峰值电流:24 A
封装主体材料:PLASTIC/EPOXY封装代码:TO-252
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
座面最大高度:2.5 mm标称供电电压:12 V
表面贴装:YES技术:MOS
端子形式:GULL WING端子节距:2.28 mm
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
断开时间:100 µs接通时间:100 µs
宽度:6.22 mmBase Number Matches:1

BTS134D 数据手册

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HITFET II.Generation BTS 134 D  
Smart Lowside Power Switch  
Features  
Product Summary  
Drain source voltage  
On-state resistance  
Nominal load current  
Clamping energy  
S Logic Level Input  
S Input Protection (ESD)  
S Thermal shutdown with  
auto restart  
V
R
42  
50  
3.5  
3
V
mꢀ  
A
DS  
DS(on)  
I
D(Nom)  
E
J
AS  
S Overload protection  
S Short circuit protection  
S Overvoltage protection  
S Current limitation  
S Analog driving possible  
P-TO252-3-11  
Application  
S All kinds of resistive, inductive and capacitive loads in switching  
or linear applications  
S µC compatible power switch for 12 V DC applications  
S Replaces electromechanical relays and discrete circuits  
General Description  
N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded  
protection functions.  
Vbb  
M
Drain  
HITFET  
Pin 2 and 4 (TAB)  
Current  
Overvoltage-  
Protection  
Limitation  
In  
Gate-Driving  
Unit  
Pin 1  
Over-  
Overload  
Short circuit  
Protection  
temperature  
Protection  
ESD  
Protection  
Pin 3  
Source  
Complete product spectrum and additional information http://www.infineon.com/hitfet  
Page 1  
2004-03-05  

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