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BTS133TCXT PDF预览

BTS133TCXT

更新时间: 2024-02-16 10:51:43
品牌 Logo 应用领域
英飞凌 - INFINEON 开关电源开关过载保护
页数 文件大小 规格书
10页 141K
描述
Buffer/Inverter Based Peripheral Driver, 7A, MOS, PSSO2, GREEN, PLASTIC, TO-263, 3/2 PIN

BTS133TCXT 技术参数

生命周期:Active包装说明:TO-263,
Reach Compliance Code:compliant风险等级:1.61
其他特性:SEATED HGT-NOM; SEATED HGT-CALCULATED内置保护:TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL
接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVERJESD-30 代码:R-PSSO-G2
长度:10 mm功能数量:1
端子数量:2输出电流流向:SINK
标称输出峰值电流:7 A封装主体材料:PLASTIC/EPOXY
封装代码:TO-263封装形状:RECTANGULAR
封装形式:SMALL OUTLINE座面最大高度:4.5 mm
表面贴装:YES技术:MOS
端子形式:GULL WING端子节距:2.54 mm
端子位置:SINGLE断开时间:170 µs
接通时间:100 µs宽度:9.25 mm
Base Number Matches:1

BTS133TCXT 数据手册

 浏览型号BTS133TCXT的Datasheet PDF文件第2页浏览型号BTS133TCXT的Datasheet PDF文件第3页浏览型号BTS133TCXT的Datasheet PDF文件第4页浏览型号BTS133TCXT的Datasheet PDF文件第5页浏览型号BTS133TCXT的Datasheet PDF文件第6页浏览型号BTS133TCXT的Datasheet PDF文件第7页 
HITFET BTS 133  
Smart Lowside Power Switch  
Features  
Product Summary  
Drain source voltage  
On-state resistance  
Current limit  
Logic Level Input  
Input Protection (ESD)  
Thermal Shutdown  
Overload protection  
Short circuit protection  
V
60  
50  
21  
7
V
DS  
R
m  
A
DS(on)  
I
D(lim)  
Nominal load current  
Clamping energy  
A
I
D(ISO)  
2000 mJ  
E
AS  
Overvoltage protection  
Current limitation  
Status feedback with external input resistor  
Analog driving possible  
Application  
All kinds of resistive, inductive and capacitive loads in switching or  
linear applications  
µC compatible power switch for 12 V and 24 V DC applications  
Replaces electromechanical relays and discrete circuits  
General Description  
N channel vertical power FET in Smart SIPMOS chip on chip tech-  
nology. Fully protected by embedded protected functions.  
V
bb  
+
LOAD  
M
Drain  
2
Overvoltage  
protection  
Current  
dv/dt  
1
limitation  
lim itation  
IN  
Over-  
temperature  
protection  
Overload  
protection  
Short circuit  
ESD  
protection  
3
Source  
HITFET  
Page 1  
13.07.1998  
Semiconductor Group  

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