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BTS118D PDF预览

BTS118D

更新时间: 2024-02-04 18:01:55
品牌 Logo 应用领域
英飞凌 - INFINEON 外围驱动器驱动程序和接口开关接口集成电路电源开关
页数 文件大小 规格书
10页 333K
描述
Smart Lowside Power Switch

BTS118D 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:TO-252,Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
Factory Lead Time:18 weeks风险等级:5.75
内置保护:TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 代码:R-PSSO-G2长度:6.5 mm
功能数量:1端子数量:2
输出电流流向:SINK标称输出峰值电流:15 A
封装主体材料:PLASTIC/EPOXY封装代码:TO-252
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED座面最大高度:2.5 mm
标称供电电压:12 V表面贴装:YES
技术:MOS端子形式:GULL WING
端子节距:2.28 mm端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED断开时间:100 µs
接通时间:100 µs宽度:6.22 mm
Base Number Matches:1

BTS118D 数据手册

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HITFET II.Generation BTS 118 D  
Smart Lowside Power Switch  
Features  
Product Summary  
Drain source voltage  
On-state resistance  
Nominal load current  
Clamping energy  
S Logic Level Input  
S Input Protection (ESD)  
S Thermal shutdown with  
auto restart  
V
42  
V
DS  
R
100 mꢀ  
DS(on)  
I
E
2.4  
2
A
J
D(Nom)  
AS  
S Overload protection  
S Short circuit protection  
S Overvoltage protection  
S Current limitation  
S Analog driving possible  
P-TO252-3-11  
Application  
S All kinds of resistive, inductive and capacitive loads in switching  
or linear applications  
S µC compatible power switch for 12 V DC applications  
S Replaces electromechanical relays and discrete circuits  
General Description  
N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded  
protection functions.  
Vbb  
M
Drain  
HITFET  
Pin 2 and 4 (TAB)  
Current  
Overvoltage-  
Protection  
Limitation  
In  
Gate-Driving  
Unit  
Pin 1  
Over-  
Overload  
Short circuit  
Protection  
temperature  
Protection  
ESD  
Protection  
Pin 3  
Source  
Complete product spectrum and additional information http://www.infineon.com/hitfet  
Page 1  
2004-03-05  

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