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BSP75 PDF预览

BSP75

更新时间: 2024-01-07 05:16:31
品牌 Logo 应用领域
英飞凌 - INFINEON 开关电源开关
页数 文件大小 规格书
9页 57K
描述
Smart Lowside Power Switch (Logic Level Input Input protection ESD Thermal shutdown with restart)

BSP75 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOT-223
包装说明:SOP,针数:4
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.55
内置保护:TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
长度:6.5 mm功能数量:1
端子数量:4输出电流流向:SINK
标称输出峰值电流:0.7 A封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified座面最大高度:1.8 mm
标称供电电压:12 V表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子节距:2.3 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40断开时间:20 µs
接通时间:20 µs宽度:3.5 mm
Base Number Matches:1

BSP75 数据手册

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®
HITFET BSP 75  
Smart Lowside Power Switch  
Features  
Product Summary  
Continuous drain source voltage V  
Logic Level Input  
55  
550  
1
0.7  
V
mΩ  
A
DS  
Input protection (ESD)  
Thermal shutdown (with restart)  
Overload protection  
Short circuit protection  
Overvoltage protection  
Current limitation  
On-state resistance  
Current limitation  
Nominal load current  
Clamping energy  
R
DS(ON)  
I
I
D(lim)  
A
D(Nom)  
E
550  
mJ  
AS  
Application  
All kinds of resistive, inductive and capacitive loads in switching applications  
µC compatible power switch for 12 V and 24 V DC applications  
Replaces electromechanical relays and discrete circuits  
General Description  
N channel vertical power FET in Smart Power Technology. Fully protected by embedded protection functions.  
V
bb  
+
LOAD  
M
Drain  
2
Overvoltage  
protection  
dv/dt  
1
IN  
limitation  
Short circuit  
protection  
Over-  
Current  
limitation  
ESD  
temperature  
protection  
3
Source  
HITFET  
4
Pin  
1
Symbol  
Function  
IN  
Input  
2
DRAIN  
Output to the load  
Ground  
3
SOURCE  
SUBSTRATE  
TAB  
Must be connected to Pin 3  
Semiconductor Group  
Page 1 of 9  
1998-02-04  

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