Datasheet > INC5002AP1

INC5002AP1

更新时间： 2024-11-13 12:31:11

品牌	Logo	应用领域
谏早电子 - ISAHAYA		/
页数	文件大小	规格书
4页	136K
描述
For low frequency power amplify Silicon NPN Epitaxial

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

INC5002AP1 数据手册

INC5002AP1

For low frequency power amplify

Silicon NPN Epitaxial

DESCRIPTION

OUTLINE DRAWING

UNIT：ｍｍ

INC5002AP1 is a silicon NPN epitaxial transistor designed for relay

4.6 MAX

1.6

drive or Power supply application.

1.5

FEATURE

●Small package for easy mounting.

●High voltage VCEO=60V

●High collector current IC=3A

●Low VCE(sat) VCE（sat）=0.6V max（@IC=3A/ IB=300mA）

●High collector dissipation PC=500mW

0.53

MAX

0.4

0.48 MAX

1.5

3.0

マーキング

APPLICATION

MARKING

DC･DC converter, Relay drive, Motor drive

etc

TERMINAL CONNECTOR

電極接続

E：EMITTER

Ｅ: エミッタ

Ｃ: コレクタ

Ｂ: ベース

B：BASE

JEITA:SC-62

EIAJ : SC-62

JEDEC :

C：COLLECTOR

JEDEC:SOT-89

JEDEC：―

MAXIMUM RATING（Ta=25℃）

MARKING

UNIT

SYMBOL

V_CBO

V_EBO

V_CEO

I _C

PARAMETER

Collector to Base voltage

Emitter to Base voltage

Collector to Emitter voltage

Collector current

RATING

Type Name

B B

I _CM

Peak Collector current

Collector dissipation(Ta=25℃)

Junction temperature

P_C

500

℃

T_j

＋150

-55～＋150

T_stg

Storage temperature

℃

LOT №

h_FEITEM

ELECTRICAL CHARACTERISTICS（Ta=25℃）

LIMITS

SYMBOL

PARAMETER

TEST CONDITIONS

I _C=100μA，I _E=0mA

UNIT

MIN

TYP

MAX

C to B break down voltage

E to B break down voltage

C to E break down voltage

Collector cut off current

Emitter cut off current

V_(BR)CBO

V_(BR)EBO

V_(BR)CEO

I_CBO

I _E=100μA，I _C=0mA

I _C=1mA，R_BE=∞

V_CB=60V，I _E=0mA

V_EB=4V，I C=0mA

1.0

300

0.6

μA

IEBO

DC forward current gain

C to E saturation voltage

Gain band width product

Collector output capacitance

ｈＦＥ

VCE=2V，IC=0.5A

100

VCE(sat)

IC=3A，I _B=300mA

VCE=5V，IE=-100mA

VCB=10V，IE=0mA，f=1MHz

200

MHz

Cob

ISAHAYA ELECTRONICS CORPORATION

12 3 4

中文翻译

下载PDF

与INC5002AP1相关器件

型号	品牌	获取价格	描述	数据表
INC5004AC1	ISAHAYA	获取价格	FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
INC5004AP1	ISAHAYA	获取价格	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
INC5005AC1	ISAHAYA	获取价格	FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
INC5006AC1	ISAHAYA	获取价格	FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
INC6001AC1	ISAHAYA	获取价格	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE (mini type)
INC6002AC1	ISAHAYA	获取价格	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN TRANSISTOR
INC6005AP1	ISAHAYA	获取价格	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
INC6006AS1	ISAHAYA	获取价格	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
INC6007AP1	ISAHAYA	获取价格	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
INC6008AC1	ISAHAYA	获取价格	FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE