Datasheet > INC5001AP1

INC5001AP1

更新时间： 2024-11-13 05:39:19

品牌	Logo	应用领域
谏早电子 - ISAHAYA		/
页数	文件大小	规格书
4页	139K
描述
For low frequency power amplify Silicon NPN Epitaxial

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中文翻译

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数据手册

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INC5001AP1 数据手册

INC5001AP1

For low frequency power amplify

Silicon NPN Epitaxial

DESCRIPTION

OUTLINE DRAWING

UNIT：ｍｍ

INC5001AP1 is a silicon NPN epitaxial transistor designed for relay

4.6 MAX

1.6

drive or Power supply application.

1.5

FEATURE

●Small package for easy mounting.

●High voltage VCEO=60V

●High collector current IC=1A

●Low VCE(sat) VCE（sat）=0.25V max（@IC=500mA/ IB=50mA）

●High collector dissipation PC=500mW

0.53

MAX

0.4

0.48 MAX

1.5

3.0

マーキング

APPLICATION

MARKING

Relay drive, power supply for audio equipment, VTR, etc

TERMINAL CONNECTOR

電極接続

E：EMITTER

Ｅ: エミッタ

Ｃ: コレクタ

Ｂ: ベース

B：BASE

EIAJ : SC-62

JEDEC :

C：COLLECTOR

JEDEC：―

MAXIMUM RATING（Ta=25℃）

MARKING

Type Name

SYMBOL

V_CBO

V_EBO

V_CEO

I _C

PARAMETER

Collector to Base voltage

Emitter to Base voltage

Collector to Emitter voltage

Collector current

RATING

UNIT

A Y

I _CM

Peak Collector current

Collector dissipation(Ta=25℃)

Junction temperature

P_C

500

℃

T_j

＋150

-55～＋150

T_stg

Storage temperature

℃

LOT №

h_FEITEM

ELECTRICAL CHARACTERISTICS （Ta=25℃）

LIMITS

SYMBOL

PARAMETER

TEST CONDITIONS

I _C=10μA，I _E=0mA

UNIT

MIN

TYP

MAX

C to B break down voltage

E to B break down voltage

C to E break down voltage

Collector cut off current

Emitter cut off current

V_(BR)CBO

V_(BR)EBO

V_(BR)CEO

I_CBO

I _E=10μA，I _C=0mA

I _C=1mA，R_BE=∞

V_CB=80V，I _E=0mA

V_EB=5V，I C=0mA

0.1

μA

IEBO

DC forward current gain

C to E saturation voltage

Gain band width product

Collector output capacitance

ｈＦＥ

VCE=4V，IC=0.1A

130

150

320

0.25

VCE(sat)

IC=500mA，I _B=50mA

VCE=10V，IE=-50mA

VCB=10V，IE=0mA，f=1MHz

MHz

Cob

ISAHAYA ELECTRONICS CORPORATION

12 3 4

中文翻译

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