Datasheet > INC1001AC1

INC1001AC1

更新时间： 2024-11-13 12:31:11

品牌	Logo	应用领域
谏早电子 - ISAHAYA		驱动
页数	文件大小	规格书
2页	115K
描述
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE

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INC1001AC1 数据手册

INC1001AC1

PRELIMINARY

Notice：This is not a final specification

Some parametric are subject to change.

FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION

SILICON NPN EPITAXIAL TYPE

DESCRIPTION

OUTLINE DRAWING

UNIT：mm

2.8

1.5

INC1001AC1 is a silicon NPN epitaxial type transistor.

It is designed with high collector current and small V_CE(sat)

0.65

FEATURE

①

②

・Super mini package for easy mounting

・High collector current(I_C=500mA)

・Low collector saturation voltage

(V_CE（sat）<0.25V_max；IC=100mA、IB=10mA)

③

APPLICATION

For switching, Small type motor drive

JEITA:SC-59

JEDEC: Similar to TO-236

Terminal Connector

①：Base

②：Emitter

③：Collector

MAXIMUM RATING（Ta=25℃）

SYMBOL

V_CEO

PARAMETER

Collector to Emitter voltage

Collector to Base voltage

Emitter to Base voltage

Collector current

RATING

UNIT

MARKING

Type Name

V_CBO

V_EBO

I _C

0.5

200

C F D

P_C

Collector dissipation(Ta=25℃)

500（*）

＋150

-55～＋150

T_j

Junction temperature

Storage temperature

℃

T_stg

*Mounted on glass epoxy board(46mm×19mm×1mm)

ELECTRICAL CHARACTERISTICS（Ta=25℃）

LIMITS

SYMBOL

PARAMETER

TEST CONDITIONS

UNIT

MIN

TYP

MAX

V_(BR)CEO

V_(BR)CBO

V_(BR)EBO

I_CBO

C to E break down voltage

C to B break down voltage

E to B break down voltage

Collector cut off current

Emitter cut off current

I _C=1mA，I _B=0mA

I _C=100μA，I _E=0mA

I _E=100μA，I _C=0mA

V_CB=80V，I _E=0mA

0.15

μA

I_EBO

V_EB=7V，I _C=0mA

ｈＦＥ1

ｈＦＥ2

DC forward current gain1

DC forward current gain2

VCE=1V，I _C=10mA

VCE=1V，I _C=100mA

I _C=100mA，I _B=10mA

VCE=2V，I _E=-10mA，f=100MHz

105

VCE(sat) C to E saturation voltage

fT Gain bandwidth product

0.3

100

MHz

ISAHAYA ELECTRONICS CORPORATION

中文翻译

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