Datasheet > INA849_V02

INA849_V02

更新时间： 2024-11-14 02:51:31

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德州仪器 - TI		/
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描述
INA849 Ultra-Low-Noise (1 nV/âHz), High-Bandwidth, Instrumentation Amplifier

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INA849_V02 数据手册

INA849

www.ti.com

SBOS945B – NOVEMBER 2020 – REVISED APRIL 2021

INA849 Ultra-Low-Noise (1 nV/√Hz), High-Bandwidth, Instrumentation Amplifier

1 Features

3 Description

•

Ultra-low noise: 1-nV/√Hz input voltage noise

(typical)

The INA849 is an ultra-low noise instrumentation

amplifier optimized for maximum accuracy in high-

resolution systems and operation over a wide single-

supply or dual-supply range. The device offers

significantly lower input bias current than competitors

as a result of super-beta input transistors. A state-of-

the-art manufacturing process provides exceptionally

low voltage noise, input offset voltage, and offset

voltage drift.

•

Precision super-beta input performance:

– Low offset voltage: 35 µV (maximum)

– Low offset voltage drift: 0.4 μV/°C (maximum)

– Low input bias current: 20 nA (maximum)

– Low gain drift: 5 ppm/°C for G = 1 (maximum)

Bandwidth: 28 MHz (G = 1), 8 MHz (G = 100)

Slew rate: 35 V/µs

Common-mode rejection: 120 dB (minimum) for

maximum gain

Supply range:

– Single supply: 8 V to 36 V

– Dual supply: ±4 V to ±18 V

Specified temperature range:

–40°C to +125°C

Packages: 8-pin SOIC and VSSOP

•

Precisely matched integrated resistors provide a high,

92-dB (G = 1) common-mode rejection across the full

input common-mode range. A single external resistor

sets any gain from 1 to 10,000. The current-feedback

topology of the INA849 provides wide bandwidth at

higher gains for very-small, fast-moving signals. For

example, the device provides 8 MHz of bandwidth

at G = 100, and 28 MHz at a G = 1, with a fast

0.4-µs settling time (0.01%) for directly driving high-

resolution, analog-to-digital converters (ADCs).

•

2 Applications

•

Analog input module

Microphone preamplifier

Flow transmitter

Battery test

LCD test

Electrocardiogram (ECG)

Surgical equipment

Process analytics (pH, gas, concentration, force

and humidity)

Device Information

PART NUMBER

INA849

PACKAGE⁽¹⁾

BODY SIZE (NOM)

4.90 mm × 3.91 mm

3.00 mm × 3.00 mm

SOIC (8)

VSSOP (8)

(1) See the package option addendum at the end of the data

sheet for all available packages.

+V_S

100 nF

+VS

5 kꢀ

ÞIN

3 kꢀ

OUT

REF

R_G

V_O= G V_+IN- V_-IN+ V

(

)

REF

+IN

5 kꢀ

ÞVS

100 nF

ÞV_S

INA849 Simplified Internal Schematic

Input-Referred Voltage Noise Spectral Density vs

Frequency

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.

Product Folder Links: INA849

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与INA849_V02相关器件

型号	品牌	获取价格	描述	数据表
INA849DGKR	TI	获取价格	INA849 Ultra-Low-Noise (1 nV/âHz), High-Ban
INA849DGKT	TI	获取价格	INA849 Ultra-Low-Noise (1 nV/âHz), High-Ban
INA849DR	TI	获取价格	INA849 Ultra-Low-Noise (1 nV/âHz), High-Ban
INA84C030	INTEGRAL	获取价格	8-BIT MICROCONTROLLERS WITH OCD AND VST
INA84C640	INTEGRAL	获取价格	8-BIT MICROCONTROLLERS WITH OCD AND VST
INA84C641	INTEGRAL	获取价格	8-BIT MICROCONTROLLERS WITH OCD AND VST
INA851	TI	获取价格	具有低噪声 (3.2nV/√Hz)、高速 (22MHz) 和 OVP (±40V) 的全差
INA851RGTR	TI	获取价格	Low-noise (3.2 nV/√Hz) high-speed (22 MHz) fu
INA851RGTT	TI	获取价格	Low-noise (3.2 nV/√Hz) high-speed (22 MHz) fu
INA8583	IKSEMICON	获取价格	CMOS timer with RAM and I2C-bus control.

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