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INA5005AC1 PDF预览

INA5005AC1

更新时间: 2024-11-18 12:31:11
品牌 Logo 应用领域
谏早电子 - ISAHAYA 驱动
页数 文件大小 规格书
2页 115K
描述
FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE

INA5005AC1 数据手册

 浏览型号INA5005AC1的Datasheet PDF文件第2页 
INA5005AC1  
PRELIMINARY  
Notice:This is not a final specification  
Some parametric are subject to change.  
FOR HIGH CURRENT DRIVE APPLICATION  
SILICON PNP EPITAXIAL TYPE  
DESCRIPTION  
OUTLINE DRAWING  
UNIT:mm  
2.8  
1.5  
INA5005AC1 is a silicon PNP epitaxial type transistor.  
It is designed with high collector current and small VCE(sat)  
0.65  
0.65  
.
FEATURE  
・Super mini package for easy mounting  
・High collector current(IC=-1.5A)  
・Low collector saturation voltage  
(VCE(sat)<-0.5Vmax;IC=-800mA、IB=-80mA)  
APPLICATION  
For switching, Small type motor drive  
JEITA:SC-59  
JEDEC: Similar to TO-236  
Terminal Connector  
①:Base  
②:Emitter  
③:Collector  
MAXIMUM RATING(Ta=25℃)  
SYMBOL  
VCEO  
VCBO  
VEBO  
I C  
PARAMETER  
Collector to Emitter voltage  
Collector to Base voltage  
Emitter to Base voltage  
Collector current  
RATING  
-25  
UNIT  
V
MARKING  
Type Name  
-40  
V
-6  
V
-1.5  
A
PC  
Collector dissipation(Ta=25℃)  
Junction temperature  
200  
mW  
A C H  
Tj  
+150  
-55~+150  
Tstg  
Storage temperature  
ELECTRICAL CHARACTERISTICS(Ta=25℃)  
LIMITS  
SYMBOL  
PARAMETER  
TEST CONDITIONS  
UNIT  
MIN  
-25  
-40  
-6  
-
TYP  
MAX  
-
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
ICBO  
C to E break down voltage  
C to B break down voltage  
E to B break down voltage  
Collector cut off current  
Emitter cut off current  
I C=-1mA,I B=0mA  
-
V
V
I C=-100μA,I E=0mA  
I E=-100μA,I C=0mA  
VCB=-40V,I E =0mA  
VEB=-6V,I C=0mA  
-
-
-
-
V
-
-0.1  
-0.1  
-
μA  
μA  
-
IEBO  
-
-
FE1  
DC forward current gain1  
DC forward current gain2  
DC forward current gain3  
C to E saturation voltage  
B to E saturation voltage  
Gain bandwidth product  
Collector output capacitance  
VCE=-1V,I C=-5mA  
45  
85  
40  
-
-
FE2  
VCE=-1V,I C=-100mA  
VCE=-1V,I C=-800mA  
I C=-800mA,I B=-80mA  
I C=-800mA,I B=-80mA  
VCE=-10V,I E=50mA,f=100MHz  
VCB=-10V,f=100MHz  
-
300  
-
-
FE3  
-
-
VCE(sat)  
VBE(sat)  
fT  
-0.28  
-0.98  
270  
10  
-0.5  
-1.2  
-
V
-
V
100  
-
MHz  
pF  
Cob  
-
ISAHAYA ELECTRONICS CORPORATION  

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