Datasheet > INA5002AP1

INA5002AP1

更新时间： 2024-11-18 12:31:11

品牌	Logo	应用领域
谏早电子 - ISAHAYA		/
页数	文件大小	规格书
4页	136K
描述
For low frequency power amplify Silicon PNP Epitaxial

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中文翻译

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INA5002AP1 数据手册

INA5002AP1

For low frequency power amplify

Silicon PNP Epitaxial

DESCRIPTION

OUTLINE DRAWING

UNIT：ｍｍ

INA5002AP1 is a silicon PNP epitaxial transistor designed for relay

4.6 MAX

1.6

drive or Power supply application.

1.5

FEATURE

●Small package for easy mounting.

●High voltage VCEO=-60V

●High collector current IC=-3A

●Low VCE(sat) VCE（sat）=-0.6V max（@I_C=-3A/ I_B=-300mA）

●High collector dissipation PC=500mW

0.53

MAX

0.4

0.48 MAX

1.5

3.0

マーキング

APPLICATION

MARKING

DC･DC converter, Relay drive, Motor drive

etc

TERMINAL CONNECTOR

電極接続

E：EMITTER

Ｅ: エミッタ

Ｃ: コレクタ

Ｂ: ベース

B：BASE

JEITA:SC-62

EIAJ : SC-62

JEDEC :

C：COLLECTOR

JEDEC:SOT-89

JEDEC：―

MAXIMUM RATING（Ta=25℃）

MARKING

UNIT

SYMBOL

V_CBO

V_EBO

V_CEO

I _C

PARAMETER

Collector to Base voltage

Emitter to Base voltage

Collector to Emitter voltage

Collector current

RATING

Type Name

-80

-6

-60

B A

-3

I _CM

Peak Collector current

Collector dissipation(Ta=25℃)

Junction temperature

-6

P_C

500

℃

T_j

＋150

-55～＋150

T_stg

Storage temperature

℃

LOT №

h_FEITEM

ELECTRICAL CHARACTERISTICS（Ta=25℃）

LIMITS

SYMBOL

PARAMETER

TEST CONDITIONS

I _C=-100μA，I _E=0mA

UNIT

MIN

-80

-6

-60

TYP

MAX

V_(BR)CBO

V_(BR)EBO

V_(BR)CEO

I_CBO

C to B break down voltage

E to B break down voltage

C to E break down voltage

Collector cut off current

Emitter cut off current

I _E=-100μA，I _C=0mA

I _C=-1mA，R_BE=∞

V_CB=-60V，I _E=0mA

V_EB=-4V，I C=0mA

-1.0

300

-0.5

μA

IEBO

ｈＦＥ

DC forward current gain

C to E saturation voltage

Gain band width product

Collector output capacitance

VCE=-2V，IC=-0.5A

100

VCE(sat)

IC=-3A，I _B=-300mA

VCE=-5V，IE=100mA

VCB=-10V，IE=0mA，f=1MHz

200

MHz

Cob

ISAHAYA ELECTRONICS CORPORATION

12 3 4

中文翻译

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