Datasheet > INA5002AC1

INA5002AC1

更新时间： 2024-11-18 12:31:11

品牌	Logo	应用领域
谏早电子 - ISAHAYA		/
页数	文件大小	规格书
2页	397K
描述
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE

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中文翻译

获取价格

数据手册

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INA5002AC1 数据手册

INA5002AC1

PRELIMINARY

Notice：This is not a final specification

Some parametric are subject to change.

FOR LOW FREQUENCY AMPLIFY APPLICATION

SILICON PNP EPITAXIAL TYPE

DESCRIPTION

OUTLINE DRAWING

UNIT：mm

2.8

1.5

INA5002AC1 is a silicon PNP epitaxial transistor designed for

relay drive or Power supply application.

0.65

FEATURE

①

②

・Super mini package for easy mounting

・High voltage V_CEO=-60V

③

・High collector current I_C=-3A

・Low collector saturation voltage

(V_CE（sat）<-0.6V_max；I_C=-3A、I_B=-300mA)

APPLICATION

DC/DC convertor, Relay drive, Moter drive

JEITA:SC-59

JEDEC: Similar to TO-236

Terminal Connector

①：Base

②：Emitter

③：Collector

MAXIMUM RATING（Ta=25℃）

SYMBOL

V_CEO

V_EBO

V_CBO

I _C

PARAMETER

Collector to Emitter voltage

Emitter to Base voltage

Collector to Base voltage

Collector current

RATING

UNIT

MARKING

-80

-6

Type Name

-60

-3

I _CM

Peak collector current

Collector dissipation(Ta=25℃)

Junction temperature

-6

A E K

P_C

200

℃

T_j

＋150

-55～＋150

T_stg

Storage temperature

℃

ELECTRICAL CHARACTERISTICS（Ta=25℃）

LIMITS

SYMBOL

PARAMETER

TEST CONDITIONS

I _C=-100μA，I _E=0mA

UNIT

MIN

-80

-6

-60

TYP

MAX

V_(BR)CBO

V_(BR)EBO

V_(BR)CEO

I_CBO

C to B break down voltage

E to B break down voltage

C to E break down voltage

Collector cut off current

Emitter cut off current

I _E=-100μA，I _C=0mA

I _C=-1mA，R _BE=∞

V_CB=-60V，I _E=0mA

-1.0

300

-0.5

μA

I_EBO

V_EB=-4V，I _C=0mA

ｈ_ＦＥ

DC forward current gain

C to E saturation voltage

Gain bandwidth product

Collector output capacitance

V_CE=-2V，I _C=-0.5A

100

V_CE(sat)

f_T

I _C=-3A，I _B=-300mA

V_CE=-5V，I _E=100mA，f=100MHz

V_CB=-10V，I _E=0mA，f=1MHz

150

MHz

Cob

ISAHAYA ELECTRONICS CORPORATION

中文翻译

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