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INA333SJD PDF预览

INA333SJD

更新时间: 2024-11-17 05:39:19
品牌 Logo 应用领域
德州仪器 - TI 运算放大器仪表放大器放大器电路
页数 文件大小 规格书
24页 575K
描述
Micro-Power, Zerø-Drift, Rail-to-Rail Out Instrumentation Amplifier

INA333SJD 技术参数

生命周期:Active零件包装代码:DIP
包装说明:DIP-8针数:8
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8542.33.00.01Factory Lead Time:1 week
风险等级:2.13放大器类型:OPERATIONAL AMPLIFIER
架构:VOLTAGE-FEEDBACK最大平均偏置电流 (IIB):0.0014 µA
标称带宽 (3dB):0.15 MHz最小共模抑制比:100 dB
标称共模抑制比:113 dB频率补偿:YES
最大输入失调电压:25 µVJESD-30 代码:R-CDIP-T8
长度:10.29 mm低-失调:YES
微功率:YES功能数量:1
端子数量:8最高工作温度:210 °C
最低工作温度:-55 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装代码:DIP封装等效代码:DIP8,.3
封装形状:RECTANGULAR封装形式:IN-LINE
包装方法:TUBE峰值回流温度(摄氏度):NOT SPECIFIED
功率:NO电源:2/5 V
可编程功率:NO认证状态:Not Qualified
座面最大高度:4.45 mm标称压摆率:0.04 V/us
子类别:Operational Amplifier最大压摆率:0.345 mA
供电电压上限:7 V标称供电电压 (Vsup):5 V
表面贴装:NO温度等级:MILITARY
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
标称均一增益带宽:150 kHz最小电压增益:1
宽带:NO宽度:7.37 mm
Base Number Matches:1

INA333SJD 数据手册

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INA333-HT  
www.ti.com  
SBOS514 MARCH 2010  
Micro-Power, Zerø-Drift, Rail-to-Rail Out  
Instrumentation Amplifier  
Check for Samples: INA333-HT  
1
FEATURES  
SUPPORTS EXTREME TEMPERATURE  
APPLICATIONS  
2
Low Offset Voltage: 25 mV (max at 25°C),  
G 100  
Controlled Baseline  
One Assembly/Test Site  
One Fabrication Site  
Available in Extreme (–55°C/210°C)  
Temperature Range(1)  
Low Drift: 0.2 mV/°C, G 1000  
Low Noise: 55 nV/Hz, G 100  
High CMRR: 100 dB (min at 25°C), G 10  
Supply Range: +1.8 V to +5.5 V  
Input Voltage: (V–) +0.1 V to (V+) –0.1 V  
Output Range: (V–) +0.05 V to (V+) –0.05V  
Low Quiescent Current: 198 mA  
RFI Filtered Inputs  
Extended Product Life Cycle  
Extended Product-Change Notification  
Product Traceability  
Texas Instruments' high temperature products  
utilize highly optimized silicon (die) solutions  
with design and process enhancements to  
maximize performance over extended  
temperatures.  
APPLICATIONS  
Down-Hole Drilling  
High Temperature Environments  
(1) Custom temperature ranges available  
DESCRIPTION  
The INA333 is a low-power, precision instrumentation amplifier offering excellent accuracy. The versatile 3-op  
amp design, small size, and low power make it ideal for a wide range of portable applications.  
A single external resistor sets any gain from 1 to 1000. The INA333 is designed to use an industry-standard gain  
equation: G = 1 + (100k/RG).  
The INA333 provides very low offset voltage (25 mV at 25°C, G 100), excellent offset voltage drift (0.2 mV/°C,  
G 100), and high common-mode rejection (100 dB at 25°C, G 10). It operates with power supplies as low as  
1.8 V (±0.9V), and quiescent current is only 50 mA—ideal for battery-operated systems. Using autocalibration  
techniques to ensure excellent precision over the extended industrial temperature range, the INA333 also offers  
exceptionally low noise density (55 nV/Hz) that extends down to dc.  
The INA333 is is specified over the TA = –55°C to +210°C temperature range.  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
2
All trademarks are the property of their respective owners.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2010, Texas Instruments Incorporated  

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