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INA285AQDGKRQ1 PDF预览

INA285AQDGKRQ1

更新时间: 2024-11-22 11:07:11
品牌 Logo 应用领域
德州仪器 - TI 放大器光电二极管
页数 文件大小 规格书
34页 1178K
描述
AEC-Q100、-14V 至 80V 双向电流感应放大器 | DGK | 8 | -40 to 125

INA285AQDGKRQ1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:TSSOP,
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:6 weeks风险等级:1.74
放大器类型:OPERATIONAL AMPLIFIER最大共模电压:80 V
最小共模抑制比:120 dB标称共模抑制比:140 dB
最大输入失调电压:70 µVJESD-30 代码:R-PDSO-G8
长度:3 mm湿度敏感等级:2
功能数量:1端子数量:8
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
筛选级别:AEC-Q100座面最大高度:1.07 mm
子类别:Operational Amplifier供电电压上限:18 V
标称供电电压 (Vsup):5 V表面贴装:YES
温度等级:AUTOMOTIVE端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
标称均一增益带宽:2 kHz标称电压增益:1000
宽度:3 mmBase Number Matches:1

INA285AQDGKRQ1 数据手册

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INA282-Q1, INA283-Q1, INA284-Q1, INA285-Q1, INA286-Q1  
SBOS554B MARCH 2012REVISED DECEMBER 2015  
INA28x-Q1 Automotive Grade, –14-V to +80-V, Bidirectional, High Accuracy,  
Low- or High-Side, Voltage Output, Current Shunt Monitor  
1 Features  
3 Description  
The INA28x-Q1 family includes the INA282-Q1,  
INA283-Q1, INA284-Q1, INA285-Q1, and INA286-Q1  
devices. These devices are voltage output current  
shunt monitors that can sense drops across shunts at  
common-mode voltages from –14 V to +80 V,  
independent of the supply voltage. The low offset of  
the zero-drift architecture enables current sensing  
with maximum drops across the shunt as low as 10  
mV full-scale.  
1
Qualified for Automotive Applications  
AEC-Q100 Qualified With the Following Results  
Device Temperature Grade 1: –40°C to  
+125°C Ambient Operating Temperature  
Range  
Device HBM ESD Classification Level H2  
Device CDM ESD Classification Level C5  
Wide Common-Mode Range: –14 V to +80 V  
Offset Voltage: ±20 μV  
CMRR: 140 dB  
These current sense amplifiers operate from a single  
2.7-V to 18-V supply, drawing a maximum of 900 μA  
of supply current. These devices are specified over  
the extended operating temperature range of –40°C  
to +125°C, and offered in SOIC-8 and VSSOP-8  
packages.  
Accuracy:  
±1.4% Gain Error (Maximum)  
0.3 μV/°C Offset Drift  
Device Information(1)  
0.005%/°C Gain Drift (Maximum)  
PART NUMBER  
PACKAGE  
BODY SIZE (NOM)  
4.90 mm × 3.91 mm  
3.00 mm × 3.00 mm  
Available Gains:  
INA28xAQDRQ1  
SOIC (8)  
50 V/V: INA282-Q1  
100 V/V: INA286-Q1  
200 V/V: INA283-Q1  
500 V/V: INA284-Q1  
1000 V/V: INA285-Q1  
INA28xAQDGKRQ1 VSSOP (8)  
(1) For all available packages, see the package option addendum  
at the end of the data sheet.  
Quiescent Current: 900 μA (Maximum)  
Detailed Block Diagram  
Bus Supply  
œ14 V to +80 V  
2.7 V to 18 V  
Load  
2 Applications  
EV and HEV Battery Management  
EV and HEV Chargers  
+IN  
œIN  
V+  
Electric Power Steering (EPS) Systems  
Body Control Modules  
1  
2  
2  
1  
Brake Systems  
Electronic Stability Control (ESC) Systems  
2  
2  
1  
1  
OUT  
Zer-  
Drift  
Output  
33.3 k  
33.3 kꢀ  
REF2  
REF1  
GND  
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,  
intellectual property matters and other important disclaimers. PRODUCTION DATA.  
 
 
 
 
 
 

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