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INA210CIRSWT PDF预览

INA210CIRSWT

更新时间: 2024-11-20 11:07:55
品牌 Logo 应用领域
德州仪器 - TI 放大器运算放大器放大器电路
页数 文件大小 规格书
17页 582K
描述
26V、双向、高精度电流感应放大器 | RSW | 10 | -40 to 125

INA210CIRSWT 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:UQFN-10
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:6 weeks风险等级:1.61
放大器类型:OPERATIONAL AMPLIFIER最大平均偏置电流 (IIB):35 µA
最大共模电压:26 V最小共模抑制比:105 dB
标称共模抑制比:140 dB最大输入失调电压:35 µV
JESD-30 代码:R-PQCC-N10JESD-609代码:e4
长度:1.8 mm湿度敏感等级:1
功能数量:1端子数量:10
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:VQCCN
封装形状:RECTANGULAR封装形式:CHIP CARRIER, VERY THIN PROFILE
座面最大高度:0.55 mm标称压摆率:0.4 V/us
子类别:Operational Amplifier供电电压上限:26 V
标称供电电压 (Vsup):5 V表面贴装:YES
温度等级:AUTOMOTIVE端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:NO LEAD端子节距:0.4 mm
端子位置:QUAD标称均一增益带宽:14 kHz
宽度:1.4 mmBase Number Matches:1

INA210CIRSWT 数据手册

 浏览型号INA210CIRSWT的Datasheet PDF文件第2页浏览型号INA210CIRSWT的Datasheet PDF文件第3页浏览型号INA210CIRSWT的Datasheet PDF文件第4页浏览型号INA210CIRSWT的Datasheet PDF文件第5页浏览型号INA210CIRSWT的Datasheet PDF文件第6页浏览型号INA210CIRSWT的Datasheet PDF文件第7页 
SC70  
Package  
INA210, INA211  
INA212, INA213  
INA214  
www.ti.com ....................................................................................................................................................................................................... SBOS437MAY 2008  
Voltage Output, High or Low Side Measurement,  
Bi-Directional Zerø-Drift Series  
CURRENT SHUNT MONITOR  
1
FEATURES  
APPLICATIONS  
NOTEBOOK COMPUTERS  
CELL PHONES  
TELECOM EQUIPMENT  
POWER MANAGEMENT  
BATTERY CHARGERS  
WELDING EQUIPMENT  
2
WIDE COMMON-MODE RANGE: –0.3V to 26V  
OFFSET VOLTAGE: ±35µV (Max, INA210)  
(Enables shunt drops of 10mV full-scale)  
ACCURACY  
±1% Gain Error (Max over temperature)  
0.5µV/°C Offset Drift (Max)  
10ppm/°C Gain Drift (Max)  
DESCRIPTION  
CHOICE OF GAINS:  
The INA210, INA211, INA212, INA213, and INA214  
are voltage output current shunt monitors that can  
sense drops across shunts at common-mode  
voltages from –0.3V to 26V, independent of the  
supply voltage. Five fixed gains are available: 50V/V,  
100V/V, 200V/V, 500V/V, or 1000V/V. The low offset  
of the Zerø-Drift architecture enables current sensing  
with maximum drops across the shunt as low as  
10mV full-scale.  
INA210: 200V/V  
INA211: 500V/V  
INA212: 1000V/V  
INA213: 50V/V  
INA214: 100V/V  
QUIESCENT CURRENT: 100µA (max)  
SC70 package  
These devices operate from a single +2.7V to +26V  
power supply, drawing a maximum of 100µA of  
supply current. All versions are specified over the  
extended operating temperature range (–40°C to  
+125°C), and offered in an SC70 package.  
RSHUNT  
Supply  
Load  
Reference  
Voltage  
Output  
INA21x  
OUT  
REF  
R1  
R3  
IN-  
GND  
+2.7V to +26V  
IN+  
V+  
PRODUCT  
GAIN  
R3 and R4  
R1 and R2  
R2  
R4  
INA210  
INA211  
INA212  
INA213  
INA214  
200  
500  
1000  
50  
5kW  
2kW  
1MW  
1MW  
1MW  
1MW  
1MW  
CBYPASS  
0.01mF  
to  
1kW  
20kW  
10kW  
0.1mF  
100  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
2
All trademarks are the property of their respective owners.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2008, Texas Instruments Incorporated  

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