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INA129SJD PDF预览

INA129SJD

更新时间： 2024-11-03 07:07:59
品牌 Logo 应用领域
德州仪器 - TI 仪表放大器放大器电路
页数 文件大小 规格书
28页 1389K
描述
PRECISION, LOW POWER INSTRUMENTATION AMPLIFIERS

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INA129SJD 技术参数

生命周期：Active零件包装代码：DIP
包装说明：DIP-8针数：8
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8542.33.00.01Factory Lead Time：1 week
风险等级：2.09Is Samacsys：N
放大器类型：INSTRUMENTATION AMPLIFIER最大平均偏置电流 (IIB)：0.05 µA
标称带宽 (3dB)：1.3 MHz最小共模抑制比：113 dB
最大输入失调电流 (IIO)：0.01 µA最大输入失调电压：125 µV
JESD-30 代码：R-CDIP-T8长度：11.81 mm
负供电电压上限：-18 V标称负供电电压 (Vsup)：-15 V
最大非线性：0.7%功能数量：1
端子数量：8最高工作温度：210 °C
最低工作温度：-55 °C封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装代码：DIP封装等效代码：DIP8,.3
封装形状：RECTANGULAR封装形式：IN-LINE
包装方法：TUBE峰值回流温度（摄氏度）：NOT SPECIFIED
电源：+-15 V认证状态：Not Qualified
座面最大高度：4.45 mm标称压摆率：4 V/us
子类别：Instrumentation Amplifier最大压摆率：0.75 mA
供电电压上限：18 V标称供电电压 (Vsup)：15 V
表面贴装：NO温度等级：MILITARY
端子形式：THROUGH-HOLE端子节距：2.54 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
最大电压增益：10000最小电压增益：1
标称电压增益：10宽度：7.49 mm
Base Number Matches：1

INA129SJD 数据手册

 浏览型号INA129SJD的Datasheet PDF文件第2页浏览型号INA129SJD的Datasheet PDF文件第3页浏览型号INA129SJD的Datasheet PDF文件第4页浏览型号INA129SJD的Datasheet PDF文件第5页浏览型号INA129SJD的Datasheet PDF文件第6页浏览型号INA129SJD的Datasheet PDF文件第7页 
INA128-HT, INA129-HT  
www.ti.com  
SBOS501C –JANUARY 2010–REVISED APRIL 2012  
PRECISION, LOW POWER INSTRUMENTATION AMPLIFIERS  
Check for Samples: INA128-HT, INA129-HT  
(1)  
1
FEATURES  
SUPPORTS EXTREME TEMPERATURE  
APPLICATIONS  
•
•
•
•
•
•
Low Offset Voltage  
•
•
•
•
Controlled Baseline  
One Assembly/Test Site  
One Fabrication Site  
Low Input Bias Current: 50 nA Typ  
High CMR: 95 dB Typ  
Inputs Protected to ±40 V  
Available in Extreme (–55°C/210°C)  
Temperature Range(2)  
Wide Supply Range: ±2.25 V to ±18 V  
Low Quiescent Current: 2 mA Typ  
•
•
•
•
Extended Product Life Cycle  
Extended Product-Change Notification  
Product Traceability  
APPLICATIONS  
•
•
•
•
•
Bridge Amplifier  
Texas Instruments' high temperature products  
utilize highly optimized silicon (die) solutions  
with design and process enhancements to  
maximize performance over extended  
temperatures.  
Thermocouple Amplifier  
RTD Sensor Amplifier  
Medical Instrumentation  
Data Acquisition  
(1) Typical values for 210°C application  
(2) Custom temperature ranges available  
D, JD OR HKJ PACKAGE  
(TOP VIEW)  
HKQ PACKAGE  
(TOP VIEW)  
1
2
3
4
8
7
6
5
RG  
RG  
V+  
VO  
Ref  
1
4
8
RG  
RG  
V- IN  
V+  
VO  
V-IN  
V+  
IN  
V+  
IN  
V-  
Ref  
V-  
5
HKQ as formed or HKJ mounted dead bug  
DESCRIPTION  
The INA128 and INA129 are low power, general purpose instrumentation amplifiers offering excellent accuracy.  
The versatile three operational amplifier design and small size make them ideal for a wide range of applications.  
Current-feedback input circuitry provides wide bandwidth even at high gain.  
A single external resistor sets any gain from 1 to 10,000. The INA128 provides an industry-standard gain  
equation; the INA129 gain equation is compatible with the AD620.  
The INA128/INA129 is laser trimmed for very low offset voltage (50 μV) and high common-mode rejection (93 dB  
at G ≥ 100). It operates with power supplies as low as ±2.25 V, and quiescent current of 2 mA - typically. Internal  
input protection can withstand up to ±40 V without damage.  
The INA129 is available in 8-pin ceramic DIP and 8-pin ceramic surface-mount packages, specified for the –55°C  
to 210°C temperature range. The INA128 is available in an 8-pin SO-8 surface-mount package, specified for the  
–55°C to 175°C temperature range.  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
PRODUCTION DATA information is current as of publication date.  
Copyright © 2010–2012, Texas Instruments Incorporated  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
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INA129SJD 替代型号

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