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INA-10386 PDF预览

INA-10386

更新时间: 2024-11-18 22:05:07
品牌 Logo 应用领域
安捷伦 - AGILENT 射频和微波射频放大器微波放大器
页数 文件大小 规格书
4页 51K
描述
Low Noise, Cascadable Silicon Bipolar MMIC Amplifier

INA-10386 技术参数

生命周期:Obsolete包装说明:SL,4GW-LD,.085CIR
Reach Compliance Code:unknown风险等级:5.09
Is Samacsys:N特性阻抗:50 Ω
构造:COMPONENT最大输入功率 (CW):13 dBm
安装特点:SURFACE MOUNT端子数量:4
最大工作频率:1800 MHz最小工作频率:
最高工作温度:85 °C最低工作温度:-25 °C
封装主体材料:PLASTIC/EPOXY封装等效代码:SL,4GW-LD,.085CIR
电源:6 V射频/微波设备类型:WIDE BAND LOW POWER
子类别:RF/Microwave Amplifiers最大压摆率:55 mA
表面贴装:YES技术:BIPOLAR
最大电压驻波比:1.5Base Number Matches:1

INA-10386 数据手册

 浏览型号INA-10386的Datasheet PDF文件第2页浏览型号INA-10386的Datasheet PDF文件第3页浏览型号INA-10386的Datasheet PDF文件第4页 
Low Noise, Cascadable  
Silicon Bipolar MMIC Amplifier  
Technical Data  
INA-10386  
feedback amplifier housed in a  
Features  
86 Plastic Package  
low cost surface mount plastic  
package. It is designed for narrow  
or wide bandwidth commercial  
and industrial applications that  
require high gain and moderate  
power.  
• Cascadable 50 Gain Block  
• 3 dB Bandwidth:  
DC to 1.8 GHz  
• 26 dB Typical Gain at  
1.5 GHz  
• 10 dBm Typical P1dB at  
1.5 GHz  
The INA series of MMICs is  
fabricated using HP’s 10 GHz f ,  
T
• Unconditionally Stable  
(k>1)  
25 GHz f  
, ISOSAT™-I silicon  
MAX  
bipolar process which uses nitride  
self-alignment, submicrometer  
lithography, trench isolation, ion  
implantation, gold metallization  
and polyimide intermetal dielec-  
tric and scratch protection to  
achieve excellent performance,  
uniformity and reliability.  
• Surface Mount Plastic  
Package  
Description  
The INA-10386 is a low-noise  
silicon bipolar Monolithic Micro-  
wave Integrated Circuit (MMIC)  
Typical Biasing Configuration  
VCC  
RFC (Optional)  
bias  
I
= 45 mA  
nom.  
d
R
4
C
C
block  
block  
3
RF IN  
RF OUT  
1
V
= 6.0 V  
d
2
6-112  
5965-9679E  

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