Datasheet > IMZA75R027M1H

IMZA75R027M1H

更新时间： 2024-11-22 17:02:03

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
15页	1518K
描述
The CoolSiC? MOSFET? 750 V G1 leverages more than 20 years of SiC experience in Infineon.? It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density.?

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IMZA75R027M1H 数据手册

IMZA75R027M1H

MOSFET

PG-TO247-4

CoolSiCªꢀPowerꢀDeviceꢀ750ꢀVꢀG1

Theꢀ750ꢀVꢀCoolSiC™ꢀisꢀbuiltꢀoverꢀtheꢀsolidꢀsiliconꢀcarbideꢀtechnology

developedꢀinꢀInfineonꢀinꢀmoreꢀthanꢀ20ꢀyears.ꢀLeveragingꢀtheꢀwideꢀbandgap

SiCꢀmaterialꢀcharacteristics,ꢀtheꢀ750VꢀCoolSiC™ꢀMOSFETꢀoffersꢀaꢀunique

combinationꢀofꢀperformance,ꢀreliabilityꢀandꢀeaseꢀofꢀuse.ꢀSuitableꢀforꢀhigh

temperatureꢀandꢀharshꢀoperations,ꢀitꢀenablesꢀtheꢀsimplifiedꢀandꢀcost

effectiveꢀdeploymentꢀofꢀtheꢀhighestꢀsystemꢀefficiency.

Tab

Features

•ꢀHighlyꢀrobustꢀ750Vꢀtechnology,ꢀ100%ꢀavalancheꢀtested

•ꢀBest-in-classꢀR_DS(on)ꢀxꢀQ_fr

•ꢀExcellentꢀR_DS(on)ꢀxꢀQ_ossꢀandꢀR_DS(on)ꢀxꢀQ_G

•ꢀUniqueꢀcombinationꢀofꢀꢀlowꢀC_rss/C_issꢀandꢀhighꢀV_GS(th)

•ꢀInfineonꢀproprietaryꢀdieꢀattachꢀtechnology

•ꢀDriverꢀsourceꢀpinꢀavailable

Drain

Pin 1, Tab

Gate

Pin 4

Driver

Source

Pin 3

Benefits

Power

Source

Pin 2

•ꢀEnhancedꢀrobustnessꢀandꢀreliabilityꢀforꢀbusꢀvoltagesꢀbeyondꢀ500ꢀV

•ꢀSuperiorꢀefficiencyꢀinꢀhardꢀswitching

*1: Internal body diode

•ꢀHigherꢀswitchingꢀfrequencyꢀinꢀsoftꢀswitchingꢀtopologies

•ꢀRobustnessꢀagainstꢀparasiticꢀturnꢀonꢀforꢀunipolarꢀgateꢀdriving

•ꢀReducedꢀswitchingꢀlossesꢀthroughꢀimprovedꢀgateꢀcontrol

Potentialꢀapplications

•ꢀEVꢀchargingꢀinfrastructure

•ꢀSolarꢀPVꢀinverters

•ꢀUPSꢀ(uninterruptableꢀpowerꢀsupplies)

•ꢀEnergyꢀstorageꢀandꢀbatteryꢀformation

•ꢀTelecomꢀandꢀServerꢀSMPS

Productꢀvalidation

FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications

Pleaseꢀnote:ꢀTheꢀsourceꢀandꢀdriverꢀsourceꢀpinsꢀareꢀnotꢀexchangeable.

Theirꢀexchangeꢀmightꢀleadꢀtoꢀmalfunction.

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Parameter

V_DSSꢀoverꢀfullꢀT_j,range

R_DS(on),typ

Value

750

Unit

mΩ

R_DS(on),max

Q_G,typ

I_DM,max

198

100

17.9

Q_oss,typꢀ@ꢀ500ꢀV

E_oss,typꢀ@ꢀ500ꢀV

µJ

Typeꢀ/ꢀOrderingꢀCode

Package

Marking

75R027M1

RelatedꢀLinks

IMZA75R027M1H

PG-TO247-4

see Appendix A

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2024-01-30

12 3 4 5 6 7...15

中文翻译

下载PDF

与IMZA75R027M1H相关器件

型号	品牌	获取价格	描述	数据表
IMZA75R040M1H	INFINEON	获取价格	The CoolSiC? MOSFET? 750 V G1 leverages more than 20 years of SiC experience in Infineon.?
IMZA75R060M1H	INFINEON	获取价格	The CoolSiC? MOSFET? 750 V G1 leverages more than 20 years of SiC experience in Infineon.?
IMZA75R090M1H	INFINEON	获取价格	The CoolSiC? MOSFET? 750 V G1 leverages more than 20 years of SiC experience in Infineon.?
IMZA75R140M1H	INFINEON	获取价格	The CoolSiC? MOSFET? 750 V G1 leverages more than 20 years of SiC experience in Infineon.?
IN0505D	XPPOWER	获取价格	DC-DC Power Supplies
IN0509D	XPPOWER	获取价格	DC-DC Power Supplies
IN0512D	XPPOWER	获取价格	DC-DC Power Supplies
IN0515D	XPPOWER	获取价格	DC-DC Power Supplies
IN0524D	XPPOWER	获取价格	DC-DC Power Supplies
IN1183	MICROSEMI	获取价格	Silicon Power Rectifier

与IMZA75R027M1H相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

27
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

19
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

49
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

47

产品中心

服务支持

精选活动

关于我们

帮助中心

IMZA75R027M1H

IMZA75R027M1H 数据手册

与IMZA75R027M1H相关器件

与IMZA75R027M1H相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IMZA75R027M1H

IMZA75R027M1H 数据手册

与IMZA75R027M1H相关器件

与IMZA75R027M1H相关文章

您还可以找

您在本页遇到什么问题？