Datasheet > IMZA75R027M1H

IMZA75R027M1H

更新时间： 2024-04-09 19:02:57

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
15页	1518K
描述
The CoolSiC? MOSFET? 750 V G1 leverages more than 20 years of SiC experience in Infineon.? It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density.?

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IMZA75R027M1H 数据手册

IMZA75R027M1H

MOSFET

PG-TO247-4

CoolSiCªꢀPowerꢀDeviceꢀ750ꢀVꢀG1

Theꢀ750ꢀVꢀCoolSiC™ꢀisꢀbuiltꢀoverꢀtheꢀsolidꢀsiliconꢀcarbideꢀtechnology

developedꢀinꢀInfineonꢀinꢀmoreꢀthanꢀ20ꢀyears.ꢀLeveragingꢀtheꢀwideꢀbandgap

SiCꢀmaterialꢀcharacteristics,ꢀtheꢀ750VꢀCoolSiC™ꢀMOSFETꢀoffersꢀaꢀunique

combinationꢀofꢀperformance,ꢀreliabilityꢀandꢀeaseꢀofꢀuse.ꢀSuitableꢀforꢀhigh

temperatureꢀandꢀharshꢀoperations,ꢀitꢀenablesꢀtheꢀsimplifiedꢀandꢀcost

effectiveꢀdeploymentꢀofꢀtheꢀhighestꢀsystemꢀefficiency.

Tab

Features

•ꢀHighlyꢀrobustꢀ750Vꢀtechnology,ꢀ100%ꢀavalancheꢀtested

•ꢀBest-in-classꢀR_DS(on)ꢀxꢀQ_fr

•ꢀExcellentꢀR_DS(on)ꢀxꢀQ_ossꢀandꢀR_DS(on)ꢀxꢀQ_G

•ꢀUniqueꢀcombinationꢀofꢀꢀlowꢀC_rss/C_issꢀandꢀhighꢀV_GS(th)

•ꢀInfineonꢀproprietaryꢀdieꢀattachꢀtechnology

•ꢀDriverꢀsourceꢀpinꢀavailable

Drain

Pin 1, Tab

Gate

Pin 4

Driver

Source

Pin 3

Benefits

Power

Source

Pin 2

•ꢀEnhancedꢀrobustnessꢀandꢀreliabilityꢀforꢀbusꢀvoltagesꢀbeyondꢀ500ꢀV

•ꢀSuperiorꢀefficiencyꢀinꢀhardꢀswitching

*1: Internal body diode

•ꢀHigherꢀswitchingꢀfrequencyꢀinꢀsoftꢀswitchingꢀtopologies

•ꢀRobustnessꢀagainstꢀparasiticꢀturnꢀonꢀforꢀunipolarꢀgateꢀdriving

•ꢀReducedꢀswitchingꢀlossesꢀthroughꢀimprovedꢀgateꢀcontrol

Potentialꢀapplications

•ꢀEVꢀchargingꢀinfrastructure

•ꢀSolarꢀPVꢀinverters

•ꢀUPSꢀ(uninterruptableꢀpowerꢀsupplies)

•ꢀEnergyꢀstorageꢀandꢀbatteryꢀformation

•ꢀTelecomꢀandꢀServerꢀSMPS

Productꢀvalidation

FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications

Pleaseꢀnote:ꢀTheꢀsourceꢀandꢀdriverꢀsourceꢀpinsꢀareꢀnotꢀexchangeable.

Theirꢀexchangeꢀmightꢀleadꢀtoꢀmalfunction.

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Parameter

V_DSSꢀoverꢀfullꢀT_j,range

R_DS(on),typ

Value

750

Unit

mΩ

R_DS(on),max

Q_G,typ

I_DM,max

198

100

17.9

Q_oss,typꢀ@ꢀ500ꢀV

E_oss,typꢀ@ꢀ500ꢀV

µJ

Typeꢀ/ꢀOrderingꢀCode

Package

Marking

75R027M1

RelatedꢀLinks

IMZA75R027M1H

PG-TO247-4

see Appendix A

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2024-01-30

12 3 4 5 6 7...15

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