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IMZA75R020M1H PDF预览

IMZA75R020M1H

更新时间: 2024-11-19 17:02:07
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
15页 1526K
描述
The CoolSiC? MOSFET? 750 V G1 leverages more than 20 years of SiC experience in Infineon.? It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density.?

IMZA75R020M1H 数据手册

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IMZA75R020M1H  
MOSFET  
PG-TO247-4  
CoolSiCªꢀPowerꢀDeviceꢀ750ꢀVꢀG1  
Theꢀ750ꢀVꢀCoolSiC™ꢀisꢀbuiltꢀoverꢀtheꢀsolidꢀsiliconꢀcarbideꢀtechnology  
developedꢀinꢀInfineonꢀinꢀmoreꢀthanꢀ20ꢀyears.ꢀLeveragingꢀtheꢀwideꢀbandgap  
SiCꢀmaterialꢀcharacteristics,ꢀtheꢀ750VꢀCoolSiC™ꢀMOSFETꢀoffersꢀaꢀunique  
combinationꢀofꢀperformance,ꢀreliabilityꢀandꢀeaseꢀofꢀuse.ꢀSuitableꢀforꢀhigh  
temperatureꢀandꢀharshꢀoperations,ꢀitꢀenablesꢀtheꢀsimplifiedꢀandꢀcost  
effectiveꢀdeploymentꢀofꢀtheꢀhighestꢀsystemꢀefficiency.  
Tab  
1
2
3
4
Features  
•ꢀHighlyꢀrobustꢀ750Vꢀtechnology,ꢀ100%ꢀavalancheꢀtested  
•ꢀBest-in-classꢀRDS(on)ꢀxꢀQfr  
•ꢀExcellentꢀRDS(on)ꢀxꢀQossꢀandꢀRDS(on)ꢀxꢀQG  
•ꢀUniqueꢀcombinationꢀofꢀꢀlowꢀCrss/CissꢀandꢀhighꢀVGS(th)  
•ꢀInfineonꢀproprietaryꢀdieꢀattachꢀtechnology  
•ꢀDriverꢀsourceꢀpinꢀavailable  
Drain  
Pin 1, Tab  
*1  
Gate  
Pin 4  
Driver  
Source  
Pin 3  
Benefits  
Power  
Source  
Pin 2  
•ꢀEnhancedꢀrobustnessꢀandꢀreliabilityꢀforꢀbusꢀvoltagesꢀbeyondꢀ500ꢀV  
•ꢀSuperiorꢀefficiencyꢀinꢀhardꢀswitching  
*1: Internal body diode  
•ꢀHigherꢀswitchingꢀfrequencyꢀinꢀsoftꢀswitchingꢀtopologies  
•ꢀRobustnessꢀagainstꢀparasiticꢀturnꢀonꢀforꢀunipolarꢀgateꢀdriving  
•ꢀReducedꢀswitchingꢀlossesꢀthroughꢀimprovedꢀgateꢀcontrol  
Potentialꢀapplications  
•ꢀEVꢀchargingꢀinfrastructure  
•ꢀSolarꢀPVꢀinverters  
•ꢀUPSꢀ(uninterruptableꢀpowerꢀsupplies)  
•ꢀEnergyꢀstorageꢀandꢀbatteryꢀformation  
•ꢀTelecomꢀandꢀServerꢀSMPS  
Productꢀvalidation  
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications  
Pleaseꢀnote:ꢀTheꢀsourceꢀandꢀdriverꢀsourceꢀpinsꢀareꢀnotꢀexchangeable.  
Theirꢀexchangeꢀmightꢀleadꢀtoꢀmalfunction.  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
VDSSꢀoverꢀfullꢀTj,range  
RDS(on),typ  
Value  
750  
20  
Unit  
V
m  
mΩ  
nC  
A
RDS(on),max  
27  
QG,typ  
67  
IDM,max  
261  
133  
23.9  
Qoss,typꢀ@ꢀ500ꢀV  
Eoss,typꢀ@ꢀ500ꢀV  
nC  
µJ  
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
75R020M1  
RelatedꢀLinks  
IMZA75R020M1H  
PG-TO247-4  
see Appendix A  
Final Data Sheet  
1
Rev.ꢀ2.0,ꢀꢀ2024-01-30  

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