Datasheet > IMZA65R057M1H

IMZA65R057M1H

更新时间： 2024-11-22 11:14:27

品牌	Logo	应用领域
英飞凌 - INFINEON		半导体
页数	文件大小	规格书
15页	1388K
描述
CoolSiC™ MOSFET 技术通过最大限度地发挥碳化硅强大的物理特性，从而增强了设备性能、稳健性和易用性等独特优势。IMZA65R107M1H 650V CoolSiC™ MOSFET 基于先进的沟槽半导体技术，并经过优化，在毫不折衷的情况下，在应用中实现最低损耗，并在运行中实现最佳可靠性。

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中文翻译

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数据手册

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IMZA65R057M1H 数据手册

IMZA65R057M1H

MOSFET

PG-TOꢀ247-4-3

650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice

Theꢀ650ꢀVꢀCoolSiC™ꢀisꢀbuiltꢀoverꢀtheꢀsolidꢀsiliconꢀcarbideꢀtechnology

developedꢀinꢀInfineonꢀinꢀmoreꢀthanꢀ20ꢀyears.ꢀLeveragingꢀtheꢀwideꢀbandgap

SiCꢀmaterialꢀcharacteristics,ꢀtheꢀ650VꢀCoolSiC™ꢀMOSFETꢀoffersꢀaꢀunique

combinationꢀofꢀperformance,ꢀreliabilityꢀandꢀeaseꢀofꢀuse.ꢀSuitableꢀforꢀhigh

temperatureꢀandꢀharshꢀoperations,ꢀitꢀenablesꢀtheꢀsimplifiedꢀandꢀcost

effectiveꢀdeploymentꢀofꢀtheꢀhighestꢀsystemꢀefficiency.

Tab

Features

•ꢀOptimizedꢀswitchingꢀbehaviorꢀatꢀhigherꢀcurrents

•ꢀCommutationꢀrobustꢀfastꢀbodyꢀdiodeꢀwithꢀlowꢀQ_rr

•ꢀSuperiorꢀgateꢀoxideꢀreliability

•ꢀT_j,max=175°Cꢀandꢀexcellentꢀthermalꢀbehavior

•ꢀLowerꢀR_DS(on)ꢀandꢀpulseꢀcurrentꢀdependencyꢀonꢀtemperature

•ꢀIncreasedꢀavalancheꢀcapability

Drain

Pin 1, Tab

•ꢀCompatibleꢀwithꢀstandardꢀdriversꢀ(recommendedꢀdrivingꢀvoltage:ꢀ18V)

•ꢀKelvinꢀsourceꢀprovidesꢀupꢀtoꢀ4ꢀtimesꢀlowerꢀswitchingꢀlosses

Gate

Pin 4

Driver

Source

Pin 3

Power

Source

Pin 2

Benefits

*1: Internal body diode

•ꢀUniqueꢀcombinationꢀofꢀhighꢀperformance,ꢀhighꢀreliabilityꢀandꢀeaseꢀofꢀuse

•ꢀEaseꢀofꢀuseꢀandꢀintegration

•ꢀSuitableꢀforꢀtopologiesꢀwithꢀcontinuousꢀhardꢀcommutation

•ꢀHigherꢀrobustnessꢀandꢀsystemꢀreliability

•ꢀEfficiencyꢀimprovement

•ꢀReducedꢀsystemꢀsizeꢀleadingꢀtoꢀhigherꢀpowerꢀdensity

Potentialꢀapplications

•ꢀSMPS

•ꢀUPSꢀ(uninterruptableꢀpowerꢀsupplies)

•ꢀSolarꢀPVꢀinverters

•ꢀEVꢀchargingꢀinfrastructure

•ꢀEnergyꢀstorageꢀandꢀbatteryꢀformation

•ꢀClassꢀDꢀamplifiers

Productꢀvalidation

FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications

Pleaseꢀnote:ꢀTheꢀsourceꢀandꢀdriverꢀsourceꢀpinsꢀareꢀnotꢀexchangeable.

Theirꢀexchangeꢀmightꢀleadꢀtoꢀmalfunction.

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Parameter

V_DSꢀ@ꢀT_Jꢀ=ꢀ25ꢀ°C

R_DS(on),typ

Value

650

Unit

mΩ

R_DS(on),max

Q_G,typ

I_D,pulse

Q_ossꢀ@ꢀ400ꢀV

E_ossꢀ@ꢀ400ꢀV

µJ

9.8

Typeꢀ/ꢀOrderingꢀCode

Package

Marking

RelatedꢀLinks

IMZA65R057M1H

PG-TO247-4-3

65R057M1

see Appendix A

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2021-03-17

12 3 4 5 6 7...15

中文翻译

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与IMZA65R057M1H相关器件

型号	品牌	获取价格	描述	数据表
IMZA65R072M1H	INFINEON	获取价格	CoolSiC™ MOSFET 技术通过最大限度地发挥碳化硅强大的物理特性，从而增强了设备
IMZA65R083M1H	INFINEON	获取价格	CoolSiC??MOSFET?技术通过最大限度地发挥碳化硅强大的物理特性，从而增强了设备
IMZA65R107M1H	INFINEON	获取价格	CoolSiC™ MOSFET 技术通过最大限度地发挥碳化硅强大的物理特性，从而增强了设备
IMZA75R016M1H	INFINEON	获取价格	The CoolSiC? MOSFET? 750 V G1 leverages more than 20 years of SiC experience in Infineon.?
IMZA75R020M1H	INFINEON	获取价格	The CoolSiC? MOSFET? 750 V G1 leverages more than 20 years of SiC experience in Infineon.?
IMZA75R027M1H	INFINEON	获取价格	The CoolSiC? MOSFET? 750 V G1 leverages more than 20 years of SiC experience in Infineon.?
IMZA75R040M1H	INFINEON	获取价格	The CoolSiC? MOSFET? 750 V G1 leverages more than 20 years of SiC experience in Infineon.?
IMZA75R060M1H	INFINEON	获取价格	The CoolSiC? MOSFET? 750 V G1 leverages more than 20 years of SiC experience in Infineon.?
IMZA75R090M1H	INFINEON	获取价格	The CoolSiC? MOSFET? 750 V G1 leverages more than 20 years of SiC experience in Infineon.?
IMZA75R140M1H	INFINEON	获取价格	The CoolSiC? MOSFET? 750 V G1 leverages more than 20 years of SiC experience in Infineon.?

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