Datasheet > IMZA120R020M1H

IMZA120R020M1H

更新时间： 2024-11-19 11:16:11

品牌	Logo	应用领域
英飞凌 - INFINEON		开关栅 DC-DC转换器双极性晶体管功率因数校正二极管栅极
页数	文件大小	规格书
16页	1439K
描述
采用TO247-4封装的1200V 20mΩ CoolSiCTM 碳化硅MOSFET基于先进的沟槽工艺，该工艺经过优化兼具性能与可靠性。与IGBT和MOSFET等传统的硅（Si）基器件相比，SiC MOSFET具有诸多优势，例如1200 V开关器件中最低的栅极电荷和器件电容、体二极管没有反向恢复损耗、关断损耗受温度影响小以及没有拐点电压的导通特性。因此，CoolSiC™碳化硅 MOSFET非常适用于硬开关和谐振开关拓扑结构，如功率因素校正（PFC）电路、双向拓扑以及DC-DC转换器或DC-AC逆变器。

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IMZA120R020M1H 数据手册

IMZA120R020M1H

™

CoolSiC 1200 V SiC Trench MOSFET

™

CoolSiC 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET with .XT interconnection technology

Features

• V_DSS= 1200 V at T_vj= 25°C

• I_DDC= 98 A at T_c= 25°C

• R_DS(on)= 19 mΩ at V_GS= 18 V, T_vj= 25°C

• Very low switching losses

• Short circuit withstand time 3 µs

• Benchmark gate threshold voltage, V_GS(th)= 4.2 V

• Robust against parasitic turn on, 0 V turn-oﬀ gate voltage can be applied

• Robust body diode for hard commutation

• .XT interconnection technology for best-in-class thermal performance

Potential applications

• General purpose drives (GPD)

• EV-Charging

• Online UPS/Industrial UPS

• String inverter

• Solar power optimizer

Product validation

• Qualified for industrial applications according to the relevant tests of JEDEC47/20/22

Description

1 – drain

2 – source

3 – Kelvin sense contact

4 – gate

Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction (only for 4pin, TO263-7L )

Type

Package

Marking

IMZA120R020M1H

PG-TO247-4-STD-NT3.7

12M1H020

Datasheet

www.infineon.com

Please read the sections "Important notice" and "Warnings" at the end of this document

Revision 1.20

2023-05-08

12 3 4 5 6 7...16

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