Datasheet > IMZ1AFRAT110

IMZ1AFRAT110

更新时间： 2024-11-27 08:11:59

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
5页	81K
描述
Small Signal Bipolar Transistor, 0.15A I(C), NPN and PNP

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中文翻译

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数据手册

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IMZ1AFRAT110 数据手册

EMZ1 / UMZ1N / IMZ1A

Transistors

General purpose transistor

(dual transistors)

EMZ1 / UMZ1N / IMZ1A

zFeatures

zExternal dimensions (Unit : mm)

1) Both a 2SA1037AK chip and 2SC2412K chip in a

EMT or UMT or SMT package.

EMZ1

( )

2) Mounting possible with EMT3 or UMT3 or SMT3

automatic mounting machines.

1.2

1.6

3) Transistor elements are independent, eliminating

interference.

Each lead has same dimensions

4) Mounting cost and area can be cut in half.

ROHM : EMT6

UMZ1N

Abbreviated symbol : Z1

zStructure

NPN / PNP epitaxial planar silicon transistor

1.25

2.1

zEquivalent circuit

0.1Min.

Each lead has same dimensions

EMZ1 / UMZ1N

IMZ1A

(3) (2) (1)

(4) (5) (6)

ROHM : UMT6

EIAJ : SC-88

Abbreviated symbol : Z1

Tr1

Tr2

IMZ1A

(4) (5) (6)

(3) (2) (1)

1.6

2.8

zAbsolute maximum ratings (Ta = 25°C)

0.3to0.6

Limits

Each lead has same dimensions

Parameter

Symbol

Unit

Tr2

ROHM : SMT6

EIAJ : SC-74

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CBO

CEO

EBO

−60

−50

−6

Abbreviated symbol : Z1

150

−150

∗

EMZ1, UMZ1N

Power

150 (TOTAL)

300 (TOTAL)

150

dissipation

IMZ1A

Junction temperature

Storage temperature

˚C

Tstg

−55 to +150

1 120mW per element must not be exceeded.

2 200mW per element must not be exceeded.

∗

Rev.A

1/4

12 3 4 5

中文翻译

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