Datasheet > IMZ1AFRAT108

IMZ1AFRAT108

更新时间： 2024-09-16 21:19:35

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
5页	955K
描述
Small Signal Bipolar Transistor,

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中文翻译

获取价格

技术参数
数据手册

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IMZ1AFRAT108 技术参数

是否Rohs认证：	符合	生命周期：	Not Recommended
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.72	湿度敏感等级：	1
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

IMZ1AFRAT108 数据手册

EMZ1 / UMZ1N / IMZ1A

EMZ1FHA / UMZ1NFHA / IMZ1AFRA

Transistors

AEC-Q101 Qualified

General purpose transistor

(dual transistors)

EMZ1F/HUAMZ/ 1UNM/ZI1MNZF1HAA / IMZ1AFRA

zFeatures

1) Both a

EMT or UMT or SMT package.

zExternal dimensions (Unit : mm)

2SA1037AKFRA 2SC2412KFRA

2SA1037AK chip and 2SC2412K chip in a

EMZ1

EMZ1FHA

( )

2) Mounting possible with EMT3 or UMT3 or SMT3

automatic mounting machines.

1.2

1.6

3) Transistor elements are independent, eliminating

interference.

Each lead has same dimensions

4) Mounting cost and area can be cut in half.

ROHM : EMT6

Abbreviated symbol : Z1

UMZ1N

UMZ1NFHA

zStructure

NPN / PNP epitaxial planar silicon transistor

1.25

2.1

zEquivalent circuit

0.1Min.

Each lead has same dimensions

EMZ1FHA / UMZ1NFHA

EMZ1 / UMZ1N

IMZ1AFRA

IMZ1A

(3) (2) (1)

(4) (5) (6)

ROHM : UMT6

EIAJ : SC-88

Abbreviated symbol : Z1

Tr1

Tr2

IMZ1AFRA

IMZ1A

(4) (5) (6)

(3) (2) (1)

1.6

2.8

zAbsolute maximum ratings (Ta = 25°C)

0.3to0.6

Limits

Each lead has same dimensions

Parameter

Symbol

Unit

Tr2

ROHM : SMT6

EIAJ : SC-74

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CBO

CEO

EBO

−60

−50

−6

Abbreviated symbol : Z1

150

−150

∗

EMZ1FHA / UMZ1NFHA

150 (TOTAL)

300 (TOTAL)

150

EMZ1, UMZ1N

Power

dissipation

IMIMZ1AFRA

Z1A

Junction temperature

Storage temperature

˚C

Tstg

−55 to +150

1 120mW per element must not be exceeded.

2 200mW per element must not be exceeded.

∗

Rev.A

1/4

12 3 4 5

中文翻译

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