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IMW120R090M1H PDF预览

IMW120R090M1H

更新时间: 2024-11-26 11:11:59
品牌 Logo 应用领域
英飞凌 - INFINEON 开关DC-DC转换器双极性晶体管功率因数校正二极管栅极半导体
页数 文件大小 规格书
17页 1173K
描述
IMW120R090M1H是采用TO247-3封装的1200 V、90 mΩCoolSiC™  SiC MOSFET,它基于先进的沟槽半导体工艺,该工艺经过优化,兼具性能与可靠性。与IGBT和MOSFET等传统硅(Si)基开关相比,SiC MOSFET具有诸多优势,例如1200V级开关中最低的栅极电荷和器件电容电平、抗换向体二极管无反向恢复损耗、 独立于温度的低开关损耗以及无阈值导通特性。因此,CoolSiC™ MOSFET非常适用于硬开关和谐振开关拓扑结构,如功率因素校正(PFC)电路、双向拓扑以及DC-DC转换器或DC-AC逆变器。

IMW120R090M1H 数据手册

 浏览型号IMW120R090M1H的Datasheet PDF文件第2页浏览型号IMW120R090M1H的Datasheet PDF文件第3页浏览型号IMW120R090M1H的Datasheet PDF文件第4页浏览型号IMW120R090M1H的Datasheet PDF文件第5页浏览型号IMW120R090M1H的Datasheet PDF文件第6页浏览型号IMW120R090M1H的Datasheet PDF文件第7页 
IMW120R090M1H  
IMW120R090M1H  
CoolSiC™ 1200V SiC Trench MOSFET  
Silicon Carbide MOSFET  
Drain  
pin 2  
Features  
Gate  
pin 1  
Very low switching losses  
Threshold-free on state characteristic  
Wide gate-source voltage range  
Source  
pin 3  
Benchmark gate threshold voltage, VGS(th) = 4.5V  
0V turn-off gate voltage for easy and simple gate drive  
Fully controllable dV/dt  
Robust body diode for hard commutation  
Temperature independent turn-off switching losses  
Benefits  
Efficiency improvement  
Enabling higher frequency  
Increased power density  
Cooling effort reduction  
Reduction of system complexity and cost  
Potential applications  
Energy generation  
o
Solar string inverter and solar optimizer  
Industrial power supplies  
o
o
Industrial UPS  
Industrial SMPS  
Infrastructure Charge  
Charger  
o
Product validation  
Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22  
Table 1  
Type  
Key Performance and Package Parameters  
VDS  
ID  
RDS(on)  
Tvj = 25°C, ID = 8.5A, VGS = 18V  
Tvj,max  
Marking  
12M1H090  
Package  
TC = 25°C, Rth(j-c,max)  
IMW120R090M1H 1200V  
26A  
90mΩ  
175°C  
PG-TO247-3  
Datasheet  
Please read the Important Notice and Warnings at the end of this document  
page 1 of 17  
2.2  
2020-12-11  
www.infineon.com  
 
 
 
 

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