Datasheet > IMW120R030M1H

IMW120R030M1H

更新时间： 2024-09-18 11:15:51

品牌	Logo	应用领域
英飞凌 - INFINEON		开关栅 DC-DC转换器双极性晶体管功率因数校正二极管栅极半导体
页数	文件大小	规格书
17页	1174K
描述
IMW120R030M1H是采用TO247-3封装的1200 V、30 mΩ CoolSiC™ SiC MOSFET，它基于先进的沟槽半导体工艺，该工艺经过优化，兼具性能与可靠性。与IGBT和MOSFET等传统硅（Si）基开关相比，SiC MOSFET具有诸多优势，例如1200V级开关中最低的栅极电荷和器件电容电平、抗换向体二极管无反向恢复损耗、独立于温度的低开关损耗以及无阈值导通特性。因此，CoolSiC™ MOSFET非常适用于硬开关和谐振开关拓扑结构，如功率因素校正（PFC）电路、双向拓扑以及DC-DC转换器或DC-AC逆变器。

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数据手册

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IMW120R030M1H 数据手册

IMW120R030M1H

CoolSiC™ 1200V SiC Trench MOSFET

Silicon Carbide MOSFET

Drain

pin 2

Features

Gate

pin 1



Very low switching losses

Threshold-free on state characteristic

Wide gate-source voltage range

Source

pin 3

Benchmark gate threshold voltage, V_GS(th)= 4.5V

0V turn-off gate voltage for easy and simple gate drive

Fully controllable dV/dt

Robust body diode for hard commutation

Temperature independent turn-off switching losses

Benefits



Efficiency improvement

Enabling higher frequency

Increased power density

Cooling effort reduction

Reduction of system complexity and cost

Potential applications



Energy generation

Solar string inverter and solar optimizer



Industrial power supplies

Industrial UPS

Industrial SMPS



Infrastructure – Charge

Charger

Product validation

Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22

Table 1

Type

Key Performance and Package Parameters

V_DS

I_D

R_DS(on)

T_vj= 25°C, I_D= 25A, V_GS= 18V

T_vj,max

Marking

12M1H030

Package

T_C= 25°C, R_th(j-c,max)

IMW120R030M1H 1200V

56A

30mΩ

175°C

PG-TO247-3

Datasheet

Please read the Important Notice and Warnings at the end of this document

page 1 of 17

2.2

2020-12-11

www.infineon.com

12 3 4 5 6 7...17

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