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IMB2A PDF预览

IMB2A

更新时间: 2024-02-02 10:22:01
品牌 Logo 应用领域
罗姆 - ROHM 晶体小信号双极晶体管数字晶体管开关光电二极管
页数 文件大小 规格书
2页 39K
描述
General purpose(dual digital transistors)

IMB2A 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.5Is Samacsys:N
其他特性:DIGITAL, BUILT IN BIAS RESISTOR最大集电极电流 (IC):0.03 A
集电极-发射极最大电压:50 V配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):68JESD-30 代码:R-PDSO-G6
JESD-609代码:e1元件数量:2
端子数量:6封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):0.3 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IMB2A 数据手册

 浏览型号IMB2A的Datasheet PDF文件第2页 
EMB2 / UMB2N / IMB2A  
Transistors  
General purpose  
(dual digital transistors)  
EMB2 / UMB2N / IMB2A  
zExternal dimensions (Units : mm)  
zFeatures  
1) Two DTA144E chips in a EMT or UMT or SMT  
package.  
EMB2  
( )  
3
( )  
2
( )  
1
( )  
4
( )  
5
( )  
6
2) Same size as EMT3 or UMT3 or SMT3 package, so  
same mounting machine can be used for both.  
3) Transistor elements are independent, eliminating  
interference.  
1.2  
1.6  
Each lead has same dimensions  
ROHM : EMT6 Abbreviated symbol : B2  
UMB2N  
zStructure  
Epitaxial planar type  
PNP silicon transistor (Built-in resistor type)  
1.25  
2.1  
The following characteristics apply to both DTr1 and  
DTr2.  
0.1Min.  
Each lead has same dimensions  
zEquivalent circuit  
ROHM : UMT6  
EIAJ : SC-88  
Abbreviated symbol : B2  
EMB2 / UMB2N  
IMB2A  
(4) (5) (6)  
(3) (2) (1)  
IMB2A  
R1  
R2  
R1  
R2  
DTr  
1
DTr1  
DTr2  
DTr2  
R
1
=47k  
=47kΩ  
R
1
=47kΩ  
=47kΩ  
R
2
R2  
R
1
R
2
R2  
R
1
(3) (2) (1)  
(4) (5) (6)  
1.6  
2.8  
0.3to0.6  
zAbsolute maximum ratings (Ta = 25°C)  
Limits  
Parameter  
Symbol  
Unit  
V
Each lead has same dimensions  
Supply voltage  
V
CC  
50  
40  
10  
ROHM : SMT6  
EIAJ : SC-74  
Abbreviated symbol : B2  
Input voltage  
VIN  
V
I
O
30  
100  
Output current  
mA  
mW  
I
C (Max.)  
1
2
EMB2, UMB2N  
150 (TOTAL)  
300 (TOTAL)  
150  
Power  
Pd  
dissipation  
IMB2A  
Junction temperature  
Storage temperature  
Tj  
˚C  
˚C  
Tstg  
55 +150  
1 120mW per element must not be exceeded.  
2 200mW per element must not be exceeded.  

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