是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | Reach Compliance Code: | unknown |
风险等级: | 5.84 | 其他特性: | IMAGE REJECTION |
特性阻抗: | 50 Ω | 最大变频损耗: | 9 dB |
最大输入功率 (CW): | 最高工作温度: | 85 °C | |
最低工作温度: | -55 °C | 射频/微波设备类型: | IMAGE REJECTION |
最大电压驻波比: | 1.5 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IMB3 | ETC |
获取价格 |
TRANSISTOR | SO |
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IMB30-15BNOVC0S | SICK |
获取价格 |
INDUCTIVE PROXIMITY SENSORS |
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IMB30-15BPOVC0S | SICK |
获取价格 |
INDUCTIVE PROXIMITY SENSORS |
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IMB3A | ROHM |
获取价格 |
General purpose (dual digital transistors) |
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IMB3AFRAT108 | ROHM |
获取价格 |
Small Signal Bipolar Transistor |
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IMB3AT108 | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, |
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IMB3AT110 | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, SMT6, S |
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IMB3NT110 | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, SC-74, |
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IMB4 | ETC |
获取价格 |
TRANSISTOR | SO |
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IMB42CGR | TE |
获取价格 |
Signal Relays |
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