5秒后页面跳转
IM810D-13-ES-80.0000MHZ PDF预览

IM810D-13-ES-80.0000MHZ

更新时间: 2024-11-09 07:58:55
品牌 Logo 应用领域
ILSI /
页数 文件大小 规格书
8页 516K
描述
80MHz Nom,

IM810D-13-ES-80.0000MHZ 数据手册

 浏览型号IM810D-13-ES-80.0000MHZ的Datasheet PDF文件第2页浏览型号IM810D-13-ES-80.0000MHZ的Datasheet PDF文件第3页浏览型号IM810D-13-ES-80.0000MHZ的Datasheet PDF文件第4页浏览型号IM810D-13-ES-80.0000MHZ的Datasheet PDF文件第5页浏览型号IM810D-13-ES-80.0000MHZ的Datasheet PDF文件第6页浏览型号IM810D-13-ES-80.0000MHZ的Datasheet PDF文件第7页 
MEMS Oscillator, Ultra Performance, LVCMOS/HCMOS Compatible, 1.00 MHz to 80.00 MHz  
IM810 Series  
Features:  
Typical Applications:  
MEMS Technology  
Fibre Channel  
Server and Storage  
GPON, EPON  
100M / 1G /10G Ethernet  
Direct pin to pin drop-in replacement for industry-standard packages  
Ultra-low phase jitter: 0.5 pSec (12 kHz to 20 MHz)  
LVCMOS/HCMOS Compatible Output  
Industry-standard package 2.5 x 2.0, 3.2 x 2.5, and 5.0 x 3.2 mm x mm  
Pb-free, RoHS and REACH compliant  
Fast delivery times  
Electrical Specifications:  
Frequency Range  
Frequency Stability  
First Year Aging  
1.000 MHz to 80.000MHz  
See Part Number Guide  
±1.5 ppm  
Inclusive of Initial Tolerance, Operating Temperature Range, Load, and Voltage.  
At + 25ºC ±2ºC  
At + 25ºC ±2ºC  
10 Years Aging  
±5.0 ppm  
Operating Temperature  
See Part Number Guide  
Supply Voltage (Vdd) ±10% See Part Number Guide  
31 mA typ./ 33 mA max  
Current Consumption  
No load condition, F = 20 MHz, Vdd = +2.5 V, +2.8 V or +3.3 V  
No load condition, f = 20 MHz, Vdd = +1.8V  
29 mA typ./ 31mA max  
31 mA max  
OE Disable Current  
Vdd = +2.5 V, +2.8 V or 3.3 V, OE = GND  
Vdd = +1.8 V, OE = GND  
30 mA max  
ꢀꢀꢀ  
Standby Current  
70 µA max  
10 µA max  
Vdd = +2.5 V, +2.8 V or 3.3 V, ST = GND  
Vdd = +1.8 V, ST = GND  
ꢀꢀꢀ  
Waveform Output  
Symmetry  
LVCMOS/HCMOS  
45%/55%  
50% of waveform  
Rise / Fall Time  
Logic “1”  
1.2 nSec typ./ 2.0 nSec max 15 pF Load, 10% to 90% of Vdd  
90% of Vdd min  
10% of Vdd max  
Logic “0”  
ꢀꢀꢀ  
Input Voltage High  
Input Voltage Low  
Input Pull-up Impedance  
70% of Vdd min  
30% of Vdd max  
Pin 1, OE or ST  
ꢀꢀꢀ  
Pin 1, OE or ST  
ꢀꢀꢀ  
100 ktyp./ 250 kmax  
2.0 Mmin  
Pin 1, OE logic high or logic low, or ST logic high  
Pin 1, ST logic low  
ꢀꢀꢀ  
Startup Time  
7 mSec typ./ 10 mSec max  
150 nSec max  
Measured from the time Vdd reaches its rated minimum values  
F = 80 MHz, For other frequencies, T_oe = 100 nSec = 3 cycles  
OE Enable/Disable Time  
Resume Time  
ꢀꢀꢀ  
6 mSec typ./ 10 mSec max  
In standby mode, measured from the time ST pin crosses 50% threshold.  
RMS Period Time  
1.5 pSec typ./ 2.0 pSec max  
2.0 pSec typ./ 3.0 pSec max F = 75 MHz, all Vdds  
RMS Period Time (random) 0.5 pSec typ./ 1.0 pSec max F = 10 MHz, Integration bandwidth = 12 kHz to 20 MHz  
Notes:  
All min and max limits are specified over temperature and rated operating voltage with 15pF output unless otherwise stated.  
Typical values are at +25ºC and nominal supply voltage.  
Absolute Maximum Limits  
Storage Temperature  
-65ºC to +150ºC  
-0.5 VDC to 4.0 VDC  
2000 V max  
Supply Voltage (Vdd)  
Electrostatic Discharge  
Solder Temperature (follow standard Pb free soldering guidelines)  
Junction Temperature  
260ºC max  
150ºC max  
Rev 01/30/16_A  
Page 1 of 8  
ILSI America Phone 775-851-8880 Fax 775-851-8882 email: e-mail@ilsiamerica.com ●  
www.ilsiamerica.com  
Specifications subject to change without notice  

与IM810D-13-ES-80.0000MHZ相关器件

型号 品牌 获取价格 描述 数据表
IM810D-21-AS-1.0000MHZ ILSI

获取价格

LVCMOS/HCMOS,
IM810D-21-AS-10.0000MHZ ILSI

获取价格

10MHz Nom,
IM810D-71-AS-1.0000MHZ ILSI

获取价格

LVCMOS/HCMOS,
IM810D-71-AS-10.0000MHZ ILSI

获取价格

10MHz Nom,
IM810D-71-AS-80.0000MHZ ILSI

获取价格

80MHz Nom,
IM810D-73-ES-10.0000MHZ ILSI

获取价格

10MHz Nom,
IM810D-73-ES-66.0000MHZ ILSI

获取价格

66MHz Nom,
IM810D-73-ES-80.0000MHZ ILSI

获取价格

80MHz Nom,
IM811 ILSI

获取价格

Direct pin to pin drop-in replacement for industry-standard packages
IM811B ILSI

获取价格

Direct pin to pin drop-in replacement for industry-standard packages