Datasheet > ILH200

ILH200

更新时间： 2024-10-01 22:33:03

品牌	Logo	应用领域
英飞凌 - INFINEON		光电
页数	文件大小	规格书
4页	81K
描述
HERMETIC PHOTOTRANSISTOR DUAL CHANNEL OPTOCOUPLER

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中文翻译

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技术参数
数据手册

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ILH200 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	风险等级：	5.92
当前传输比率-最小值：	100%	最大正向电流：	0.06 A
最大正向电压：	1.7 V	最大绝缘电压：	3000 V
JESD-609代码：	e0	安装特点：	THROUGH HOLE MOUNT
元件数量：	2	最大通态电流：	0.05 A
最高工作温度：	125 °C	最低工作温度：	-55 °C
最大功率耗散：	0.35 W	最长响应时间：	0.000003 s
子类别：	Optocoupler - Transistor Outputs	表面贴装：	NO
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

ILH200 数据手册

ILH200

HERMETIC PHOTOTRANSISTOR

DUAL CHANNEL OPTOCOUPLER

FEATURES

Dimensions in inches (mm)

• Operating Temperature Range, –55°C to +125°C

• Current Transfer Ratio Guaranteed from

–55°C to +100°C Ambient Temperature Range

• High Current Transfer Ratio at Low Input Current

• Isolation Test Voltage, 3000 VDC

.390±.005

(9.91±.13)

.300

(7.62)

typ.

.320

(8.13)

max.

Siemens

XXX XXXX

• Two Isolated Channels per Package

• Standard 8 Pin DIP Package

XXYY

.150

(3.81)

max.

DESCRIPTION

.020

(.51)

min.

.010±.002

(.25±.05)

The ILH200 is designed especially for hi-rel applica-

tions requiring optical isolation with high current trans-

Anode

Emitter

fer ratio and low saturation V . Each channel of the

optocoupler consists of a light emitting diode and a

NPN silicon phototransistor mounted and coupled in

an 8 pin hermetically sealed DIP package. The low

input current makes the ILH200 well suited for direct

CMOS to LSTTL/TTL interfaces.

.018±.002

(.46±.05)

.125

(3.18)

min.

Cathode

Collector

.100 ±.010

(2.54±.25)

Cathode

Anode

Emitter

Maximum Ratings

Emitter (per channel)

Reverse Voltage ................................................................................6.0 V

Forward Current ..............................................................................60 mA

(1)

Peak Forward Current ......................................................................1 A

Power Dissipation...........................................................................75 mW

Derate Linearly from 25°C ......................................................0.75 mW/°C

Detector (per channel)

Collector-Emitter Voltage ...................................................................70 V

Emitter-Collector Voltage .....................................................................7 V

Continuous Collector Current..........................................................50 mA

Power Dissipation.........................................................................100 mW

Derate Linearly from 25°C ........................................................1.0 mW/°C

Package

(2 )

Input to Output Isolation Test Voltage ...................................3000 VDC

Storage Temperature Range ..........................................–65°C to +150°C

Operating Temperature Range.......................................–55°C to +125°C

Junction Temperature ......................................................................150°C

Soldering Time at 240°C, 1.6 mm from case ................................ 10 sec.

Power Dissipation.........................................................................350 mW

Derate Linearly from 25°C ........................................................3.5 mW/°C

Notes:

1. Values applies for P ≤1 ms, PRR≤300 pps.

2. Measured between pins 1,2,3 and 4 shorted together and pins 5,6,7 and 8

shorted together. T =25°C and duration=1 second, RH=45%.

5–1

12 3 4

中文翻译

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