ILD30

更新时间： 2024-11-27 22:48:11

品牌	Logo	应用领域
英飞凌 - INFINEON		光电输出元件
页数	文件大小	规格书
3页	68K
描述
PHOTODARLINGTON OPTOCOUPLER

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

ILD30 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
包装说明：	DIP-8	Reach Compliance Code：	compliant
HTS代码：	8541.40.80.00	风险等级：	5.45
Is Samacsys：	N	Coll-Emtr Bkdn Voltage-Min：	30 V
配置：	SEPARATE, 2 CHANNELS	标称电流传输比：	400%
最大暗电源：	100 nA	最大正向电流：	0.06 A
最大绝缘电压：	5300 V	JESD-609代码：	e0
元件数量：	2	最高工作温度：	100 °C
最低工作温度：	-55 °C	光电设备类型：	DARLINGTON OUTPUT OPTOCOUPLER
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

ILD30 数据手册

SINGLE CHANNEL IL30/31/55

DUAL CHANNEL ILD30/31/55

FEATURES

QUAD CHANNEL ILQ30/31/55

• Current Transfer Ratio

IL/ILD/ILQ30/55, 100% min.

IL/ILD/ILQ31, 200% min.

PHOTODARLINGTON OPTOCOUPLER

•

125 mA Load Current Rating

Dimensions in inches (mm)

• Fast Rise Time, 10 µS

• Fast Fall Time, 35 µS

• Single, Dual and Quad Channel

• Solid State Reliability

Single Channel

Pin one I.D.

Anode

.248 (6.30)

.256 (6.50)

Cathode

Collector

Emitter

• Standard DIP Packages

• Underwriters Lab File #E52744

.335 (8.50)

.343 (8.70)

V_E

•

VDE 0884 Available with Option 1

.300 (7.62)

typ.

.039

(1.00)

min.

DESCRIPTION

.130 (3.30)

The IL30/31/55, ILD30/31/55, and ILQ30/31/55 are

optically coupled isolators wih Gallium Arsenide

infrared emitters and silicon photodarlington sen-

sors. Switching can be achieved while maintaining

a high degree of isolation between driving and

load circuits, with no crosstalk between channels.

These optocouplers can be used to replace reed

and mercury relays with advantages of long life,

high speed switching and elimination of magnetic

ﬁelds.

.150 (3.81)

4°

18° typ.

.110 (2.79)

.150 (3.81)

typ.

.020 (.051) min.

.010 (.25)

.014 (.35)

.031 (0.80)

.035 (0.90)

.018 (0.45)

.022 (0.55)

.300 (7.62)

.347 (8.82)

.100 (2.54) typ.

Dual Channel

Pin one I.D.

Anode

Emitter

.255 (6.48)

.268 (6.81)

Cathode

Anode

Collector

Emitter

The Il30/31/55 are equivalent to MCA230/MCA231/

MCA255. The ILD30/31/55 re designed to reduce

board space requirements in high density applica-

tions.

.379 (9.63)

.390 (9.91)

.130 (3.30

.150 (3.81)

.305 typ.

Maximum Ratings

Emitter (each channel)

.030 (.76)

.045 (1.14)

(7.75) typ.

Peak Reverse Voltage........................................ 3 V

Continuous Forward Current......................... 60 mA

Power Dissipation at 25°C ......................... 100 mW

Derate Linearly from 25°C ................... 1.33 mW/°C

Detector (each channel)

4°

typ.

10 °

typ.

.115 (2.92)

.135 (3.43)

3°–9°

.030 (.76 )

.040 (1.02)

.018 (.46)

.022 (.56)

.008 (.20)

.012 (.30)

Collector-Emitter Breakdown Voltage

.100 (2.54) typ.

IL/D/Q30....................................................... 30 V

IL/D/Q55....................................................... 55 V

Collector (Load) Current............................. 125 mA

Power Dissipation at 25°C Ambient........... 150 mW

Derate Linearly from 25°C ..................... 2.0 mW/°C

Package

Total Package Power Dissipation at 25°C

IL30/31/55................................................ 250 mW

ILD30/31/55 ............................................. 400 mW

ILQ30/31/55 ............................................. 500 mW

Derate Linearly from 25°C

Quad Channel

Anode

Cathode

Anode

16 Emitter

15 Collector

one

I.D.

Collector

Emitter

.240 (6.10)

.260 (6.60)

12 Emitter

Anode

11 Collector

Cathode

Anode

13 14 15

Collector

Emitter

.780 (19.81)

.800 (20.32)

.040 (1.02)

.050 (1.27)

.300 (7.62)

typ.

.048 (1.22)

.052 (1.32)

IL30/31/55............................................ 3.3 mW/°C

ILD30/31/55 ....................................... 5.33 mW/°C

ILQ30/31/55 ....................................... 6.67 mW/°C

.034 (.86)

.130 (3.30)

.150 (3.81)

.280 (7.11)

.330 (8.38)

Isolation Test Voltage ........................ 5300 VAC

.014

(.35)

typ.

RMS

.130 (3.30)

.150 (3.81)

Creepage ................................................7 mm min.

Clearance ...............................................7 mm min.

Comparative Tracking Index............................. 175

Storage Temperature ................... –55°C to +125°C

Operating Temperature................ –55°C to +100°C

Lead Soldering Time at 260°C ....................10 sec.

.020 (.51)

.030 (.76)

.0255 (.65)

typ.

.100 (2.54) typ.

3° to 9°

.033 (.84)

typ.

.008 (.20)

.012 (.31)

.016 (.41)

.020 (.51)

5–1

12 3

中文翻译

下载PDF

与ILD30相关器件

型号	品牌	获取价格	描述	数据表
ILD30-004	ETC	获取价格	Optoelectronic
ILD30-009	ETC	获取价格	Optoelectronic
ILD30-X001T	VISHAY	获取价格	Darlington Output Optocoupler, 2-Element, 5300V Isolation, ROHS COMPLIANT, DIP-8
ILD30-X006	INFINEON	获取价格	Darlington Output Optocoupler, 2-Element, 5300V Isolation, DIP-8
ILD30-X007	INFINEON	获取价格	Darlington Output Optocoupler, 2-Element, 5300V Isolation, DIP-8
ILD30-X009	VISHAY	获取价格	Optocoupler, Photodarlington Output (Single, Dual, Quad Channel)
ILD30-X016	INFINEON	获取价格	Darlington Output Optocoupler, 2-Element, 5300V Isolation, DIP-8
ILD31	VISHAY	获取价格	Optocoupler, Photodarlington Output (Single, Dual, Quad Channel)
ILD31	INFINEON	获取价格	PHOTODARLINGTON OPTOCOUPLER
ILD3-1	VISHAY	获取价格	Optocoupler - Transistor Output, 2 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, DIP-8

与ILD30相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

48
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

38
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

66
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

62

产品中心

服务支持

精选活动

关于我们

帮助中心

ILD30

ILD30 技术参数

ILD30 数据手册

与ILD30相关器件

与ILD30相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

ILD30

ILD30 技术参数

ILD30 数据手册

与ILD30相关器件

与ILD30相关文章

您还可以找

您在本页遇到什么问题？