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ILD256

更新时间: 2024-11-27 22:48:11
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体光电晶体管光电晶体管输出元件输入元件
页数 文件大小 规格书
3页 76K
描述
DUAL AC INPUT PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER

ILD256 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:SO-8Reach Compliance Code:compliant
HTS代码:8541.40.80.00风险等级:5.48
Is Samacsys:NColl-Emtr Bkdn Voltage-Min:30 V
配置:SEPARATE, 2 CHANNELS标称电流传输比:20%
最大暗电源:50 nA最大正向电流:0.03 A
最大绝缘电压:2500 VJESD-609代码:e0
元件数量:2最高工作温度:100 °C
最低工作温度:-55 °C光电设备类型:AC INPUT-TRANSISTOR OUTPUT OPTOCOUPLER
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

ILD256 数据手册

 浏览型号ILD256的Datasheet PDF文件第2页浏览型号ILD256的Datasheet PDF文件第3页 
ILD256  
DUAL AC INPUT PHOTOTRANSISTOR  
SMALL OUTLINE  
SURFACE MOUNT OPTOCOUPLER  
FEATURES  
Dimensions in inches (mm)  
• Each Channel: Guaranteed CTR Symmetry,  
2:1 Maximum  
• Bidirectional AC Input  
.120±.002  
(3.05±.05)  
1
2
3
4
8 C  
A/K  
K/A  
A/K  
K/A  
• Industry Standard SOIC-8 Surface Mountable  
Package  
• Standard Lead Spacing, .05"  
• Available in Tape and Reel Option  
(Conforms to EIA Standard 481-2)  
7
6
5
E
C
E
.154±.002  
(3.91±.05)  
C
.240  
(6.10)  
L
.016 (.41)  
DESCRIPTION  
Pin One I.D.  
The ILD256 is a dual channel optocoupler. Each  
channel consists of two infrared emitters con-  
nected in anti-parallel and coupled to a silicon  
NPN phototransistor detector.  
7°  
.015±.002  
(.38±.05)  
40°  
.0585±.002  
(1.49±.05)  
.230±.002  
(5.84±.05)  
These circuit elements are constructed with a stan-  
dard SOIC-8 footprint.  
.004 (.10)  
.008 (.20)  
.125±.002  
(3.18±.05)  
.008 (.20)  
5°Max.  
The product is well suited for telecom applications  
such as ring detection or off/on hook status, given  
its bidirectional LED input and guaranteed current  
.050(1.27) Typ.  
.020±.004  
R.010  
(.25) Max.  
Lead coplanarity  
±.001 Max.  
.040 (1.02)  
(.51±.10)  
transfer ratio (CTR) of 20% at I = 10 mA.  
F
2 Plcs.  
Maximum Ratings  
Emitter (Each Channel)  
Characteristics (T =25°C)  
A
Continuous Forward Current .........................30 mA  
Power Dissipation at 25°C............................45 mW  
Derate Linearly from 25°C ......................0.5 mW/°C  
Sym  
Min. Typ. Max.  
Unit  
Condition  
Emitter (Each Channel)  
Forward Voltage  
Detector (Each Channel)  
V
1.2  
0.1  
1.55  
100  
V
I =±10 mA  
F
F
Collector-Emitter Breakdown Voltage ...............70 V  
Emitter-Collector Breakdown Voltage .................7 V  
Power Dissipation ........................................55 mW  
Derate Linearly from 25°C ....................0.55 mW/°C  
Reverse Current  
I
mA  
V =6.0 V  
R
R
Detector (Each Channel)  
Package  
Breakdown Voltage  
Collector-Emitter  
Emitter-Collector  
Total Package Dissipation at 25°C Ambient  
(LED + Detector) ....................................200 mW  
Derate Linearly from 25°C ......................2.0 mW/°C  
Storage Temperature ................... –55°C to +150°C  
Operating Temperature ...............–55°C to +100°C  
Soldering Time at 260°C ............................. 10 sec.  
BV  
BV  
70  
7
V
V
I =10 µA  
CEO  
C
I =10 µA  
ECO  
E
Leakage Current,  
Collector-Emitter  
I
5
50  
nA  
V =10 V  
CE  
CEO  
Package  
DC Current Transfer  
CTR  
20  
%
I =±10 mA,  
F
V
=5 V  
CE  
Symmetry  
CTR at + 10 mA  
CTR at -10 mA  
0.5  
1.0  
2.0  
0.4  
Saturation Voltage,  
Collector-Emitter  
V
I =±16 mA,  
F
CEsat  
I =2 mA  
C
Isolation Voltage,  
Input to Output  
V
2500  
VAC  
t=1 min.  
IO  
RMS  
AUGUST 1995  
5–1  

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