Datasheet > IL9270

IL9270

更新时间： 2022-01-13 09:45:52

品牌	Logo	应用领域
INTEGRAL		栅
页数	文件大小	规格书
12页	716K
描述
DTMF RECEIVER High-Performance Silicon-Gate CMOS

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数据手册

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IL9270 数据手册

IL9270

MAXIMUM RATINGS^*

Symbol

Parameter

Value

-0.3 to +6.0

-0.3 to V_CC+0.3

Unit

V_CC

V_IN

I_IN

DC Supply Voltage (Referenced to GND)

DC Input Voltage (Referenced to GND)

DC InputCurrent, per Pin

°C

P_D

Power Dissipation in Still Air,

Storage Temperature

Plastic DIP^**

500

Tstg

-65 to +150

Maximum Ratings are those values beyond which damage to the device may occur.

Functional operation should be restricted to the Recommended Operating Conditions.

Derating: -10 ^mW

°C

from 65°C to 70°C.

RECOMMENDED OPERATING CONDITIONS

Symbol

V_CC

V_IN

Parameter

DC Supply Voltage (Referenced to GND)

DC Input Voltage (Referenced to GND)

Operating Temperature

Min

4.75

1.5

-10

Max

5.25

3.5

Unit

T_A

+70

°C

P_O

Power Consumption ( f = 3.579 MHz, V_CC= 5 V)

Input Rise and Fall Time

t_r, t_f

110

This device contains protection circuitry to guard against damage due to high static voltages or electric fields.

However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this

high-impedance circuit. For proper operation, V_INand V_OUTshould be constrained to the range GND≤(V_INor

_OUT)≤V_CC.

Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or V_CC). Unused

outputs must be left open.

1 2 345 6 7...12

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