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IL55B

更新时间： 2024-11-18 22:33:47
品牌 Logo 应用领域
英飞凌 - INFINEON 光电
页数 文件大小 规格书
2页 54K
描述
PHOTODARLINGTON OPTOCOUPLER

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中文翻译

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IL55B 技术参数

是否Rohs认证： 不符合生命周期：Transferred
包装说明：PLASTIC, DIP-6Reach Compliance Code：compliant
HTS代码：8541.40.80.00风险等级：5.44
其他特性：UL RECOGNIZEDColl-Emtr Bkdn Voltage-Min：80 V
配置：SINGLE标称电流传输比：500%
最大暗电源：1000 nA最大正向电流：0.06 A
最大绝缘电压：5300 VJESD-609代码：e0
元件数量：1最高工作温度：100 °C
最低工作温度：-55 °C光电设备类型：DARLINGTON OUTPUT OPTOCOUPLER
端子面层：Tin/Lead (Sn/Pb)Base Number Matches：1

IL55B 数据手册

 浏览型号IL55B的Datasheet PDF文件第2页 
IL55B  
PHOTODARLINGTON  
OPTOCOUPLER  
FEATURES  
Package Dimensions in Inches (mm)  
• High Collector-Emitter Breakdown Voltage—  
80 V minimum  
Pin One ID.  
2
1
3
Anode  
Cathode  
NC  
1
2
3
6
5
4
Base  
• High Isolation Resistance, 1011 W Typical  
• Standard Plastic DIP Package  
• Underwriters Lab File #E52744  
.248 (6.30)  
.256 (6.50)  
Collector  
Emitter  
VE  
D
•
VDE 0884 Available with Option 1  
4
5
6
.335 (8.50)  
.343 (8.70)  
DESCRIPTION  
.300 (7.62)  
typ.  
The IL55B is an optically coupled isolator with a Gal-  
lium Arsenide infrared LED and a silicon photodarling-  
ton sensor. Switching can be achieved while  
maintaining a high degree of isolation between driving  
and load circuits. These optocouplers can be used to  
replace reed and mercury relays with advantages of  
long life, high speed switching and elimination of  
magnetic fields.  
.039  
(1.00)  
min.  
.130 (3.30)  
.150 (3.81)  
4°  
typ.  
18° typ.  
.110 (2.79)  
.150 (3.81)  
.020 (.051) min.  
.010 (.25)  
.014 (.35)  
.031 (0.80)  
.035 (0.90)  
.018 (0.45)  
.022 (0.55)  
.300 (7.62)  
.347 (8.82)  
.100 (2.54) typ.  
Maximum Ratings  
Emitter  
Electrical Characteristics (T =25°C)  
Peak Reverse Voltage ............................................. 3 V  
Continuous Forward Current ..............................60 mA  
Power Dissipation at 25°C............................... 100 mW  
Derate Linearly from 55°C ......................... 1.33 mW/°C  
Detector  
A
Parameter  
Min. Typ.  
Max.  
Unit  
Condition  
Emitter  
V
Forward Voltage*  
Reverse Current*  
Capacitance  
Detector  
1.25  
0.1  
1.5  
10  
I =50 mA  
F
Collector-Emitter Breakdown Voltage, BV  
Emitter-Collector Breakdown Voltage BV  
....... 80 V  
.......... 5 V  
CEO  
µA  
pF  
V =3.0 V  
R
ECO  
Collector (load) Current....................................125 mA  
Power Dissipation at 25°C Ambient ................ 150 mW  
Derate Linearly from 25°C ........................... 2.0 mW/°C  
Package  
Total Dissipation at 25°C Ambient .................. 250 mW  
Derate Linearly from 25°C ........................... 3.3 mW/°C  
Isolation Test Voltage (between  
25  
V =0 V  
R
BV  
80  
V
I =1 mA,  
C
CEO  
I =0  
F
5
10  
V
BV  
I =100 µA,  
E
ECO  
I =0  
F
emitter and detector refered to  
standard climate 23°C/50%RH,  
DIN 50014) ......................................... 5300 VAC  
1
I
µA  
V =60 V,  
CE  
CEO  
I =0  
RMS  
F
Creepage ................................................... 7 mm min.  
Clearance .................................................... 7 mm min.  
Tracking Resitance, Group III  
Package  
Current Transfer  
Ratio  
500  
%
I =10 mA  
F
CE  
V
=1.5 V  
(KC>600 per VDE 110 § 6,Table 3  
and DIN 53480/VDE 0330, Part 1  
Isolation Resistance  
Coupling  
Capacitance  
1.5  
pF  
12  
V =500 V, T =25°C .......................................10  
Ω
Ω
IO  
A
11  
Turn-On Time  
Turn -Off Time  
5
µs  
µs  
V =10 V  
CC  
V =500 V, T =100°C .....................................10  
IO  
A
Storage Temperature ........................ –55°C to +150°C  
Operating Temperature .................... –55°C to +100°C  
Lead Soldering Time at 260°C ......................... 10 sec.  
100  
I =5 mA  
F
R =100 Ω  
L
5–1  
12

中文翻译

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