IL211AT/212AT/213AT
Phototransistor
Small Outline Surface Mount
Optocoupler
FEATURES
• High Current Transfer Ratio
IL211A, 20% Minimum
IL212A, 50% Minimum
IL213A, 100% Minimum
Dimensions in inches (mm)
.120 .005
(3.05 .13)
.240
Anode
.154 .005 Cathode
8
7
6
5
1
2
3
4
NC
Base
Collector
Emitter
• Isolation Voltage, 3000 V
C
RMS
L
(3.91 .13)
.016 (.41)
.015 .002
NC
NC
• Electrical Specifications Similar to
Standard 6 Pin Coupler
• Industry Standard SOIC-8A Surface
Mountable Package
• Standard Lead Spacing, .05"
• Available only on Tape and Reel Option
(Conforms to EIA Standard RS481A)
• Compatible with Dual Wave, Vapor Phase
and IR Reflow Soldering
(6.10)
Pin One ID
7°
.058 .005
(1.49 .13)
40°
.192 .005
(4.88 .13)
(.38 .05)
.004 (.10)
.008 (.20)
.125 .005
(3.18 .13)
.008 (.20)
5° max.
Lead
R.010
(.25) max.
.050 (1.27)
typ.
.021 (.53)
Coplanarity
.0015 (.04)
max.
.020 .004
(.51 .10)
2 plcs.
• Underwriters Lab File #E52744
(Code LetterY)
VE
D
•
VDE 0884 Available with Option 1
DESCRIPTION
The IL211AT/212AT/213AT are optically coupled pairs
with a Gallium Arsenide infrared LED and a silicon
NPN phototransistor. Signal information, including a
DC level, can be transmitted by the device while main-
taining a high degree of electrical isolation between
input and output. The IL211AT/212AT/213AT comes in
a standard SOIC-8 small outline package for surface
mounting which makes it ideally suited for high density
applications with limited space. In addition to eliminat-
ing through-holes requirements, this package con-
forms to standards for surface mounted devices.
Characteristics T =25°C
A
Parameter
Symbol Min. Typ. Max. Unit
Condition
Emitter
Forward Voltage
Reverse Current
Capacitance
Detector
VF
IR
—
—
—
1.3
0.1
13
1.5
100
—
V
IF=10 mA
VR=6.0 V
VR=0
µA
pF
C0
Breakdown Voltage
B
30
7.0
—
—
—
—
50
V
IC=10 µA
VCEO
B
—
V
I =10 µA
VECO
E
Dark Current,
Collector-Emitter
ICEOdark
5.0
nA
VCE=10 V
IF=0
A choice of 20, 50, and 100% minimum CTR at
I =10 mA makes these optocouplers suitable for
F
a variety of different applications.
Capacitance,
CCE
—
10
—
pF
VCE=0
Collector-Emitter
Maximum Ratings
Emitter
Package
DC
IL211AT CTR
20
50
—
—
—
%
IF=10 mA,
VCE=5.0 V
Peak Reverse Voltage .................................. 6.0 V
Continuous Forward Current ...................... 60 mA
Power Dissipation at 25°C......................... 90 mW
Derate Linearly from 25°C................... 1.2mW/°C
Detector
Collector-Emitter Breakdown Voltage............ 30 V
Emitter-Collector Breakdown Voltage........... 7.0 V
Collector-Base Breakdown Voltage............... 70 V
DC
Current
Transfer
Ratio
IL212AT
IL213AT
50
80
100
130
Saturation Voltage,
Collector-Emitter
VCEsat
—
—
0.4
—
—
—
—
—
IF=10 mA,
IC=2.0 mA
Isolation Test
Voltage
V
3000
—
—
V
1 sec.
IO
RMS
Capacitance,
Input to Output
C
R
0.5
100
3.0
pF
GΩ
µs
—
I
I
..................................................... 50 mA
(t<1.0 ms)....................................... 100 mA
IO
CMAX DC
CMAX
Resistance,
Input to Output
—
—
Power Dissipation ................................... 150 mW
Derate Linearly from 25°C................... 2.0mW/°C
Package
Total Package Dissipation at 25°C Ambient
(LED + Detector).................................. 240 mW
Derate Linearly from 25°C................... 3.2mW/°C
Storage Temperature ................ –55°C to +150°C
Operating Temperature ............ –55°C to +100°C
Soldering Time at 260°C ...........................10 sec.
IO
Switching Time
t
, t
—
IC=2.0 mA,
R =100 Ω,
VLCC=10 V
on off
Document Number: 83615
Revision 17-August-01
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