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IKZA40N65EH7 PDF预览

IKZA40N65EH7

更新时间: 2024-12-01 15:18:47
品牌 Logo 应用领域
英飞凌 - INFINEON 双极性晶体管
页数 文件大小 规格书
17页 2015K
描述
Hard-switching 650 V, 40 A TRENCHSTOP? IGBT7 H7 discrete in TO247-4 package technology has been developed to fulfill the demand in green & efficient energy applications, while also offering significant improvements over its predecessor generations.

IKZA40N65EH7 数据手册

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IKZA40N65EH7  
High speed and low saturation voltage 650 V TRENCHSTOP IGBT7 technology  
High speed and low saturation voltage 650 V TRENCHSTOP IGBT7 technology copacked with soft fast recovery  
Emitter Controlled 7 diode  
Features  
• VCE = 650 V  
• IC = 40 A  
• Low switching losses  
• Very low collector-emitter saturation voltage VCEsat  
• Very soft fast recovery antiparallel diode  
• Smooth switching behavior  
• Humidity robustness  
• Optimized for hard switching, two- and three-level topologies  
• Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/  
Potential applications  
• Industrial UPS  
• EV-Charging  
• String inverter  
• Welding  
Product validation  
• Qualified for industrial applications according to the relevant tests of JEDEC47/20/22  
Description  
Type  
Package  
Marking  
IKZA40N65EH7  
PG-TO247-4-STD-NT3.7  
K40EEH7  
Datasheet  
www.infineon.com  
Please read the sections "Important notice" and "Warnings" at the end of this document  
Revision 1.00  
2023-04-27  

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