品牌 | Logo | 应用领域 |
英飞凌 - INFINEON | 双极性晶体管 | |
页数 | 文件大小 | 规格书 |
17页 | 2015K | |
描述 | ||
Hard-switching 650 V, 40 A TRENCHSTOP? IGBT7 H7 discrete in TO247-4 package technology has been developed to fulfill the demand in green & efficient energy applications, while also offering significant improvements over its predecessor generations. |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IKZA40N65RH5 | INFINEON |
获取价格 |
IGBT TRENCHSTOP™ 5;Silicon Carbide Schottky D | |
IKZA50N120CH7 | INFINEON |
获取价格 |
TRENCHSTOP™ IGBT7 | |
IKZA50N65EH7 | INFINEON |
获取价格 |
Hard-switching 650 V, 50 A?TRENCHSTOP? IGBT7?H7?discrete?in TO247-4 package technology has | |
IKZA50N65RH5 | INFINEON |
获取价格 |
Silicon Carbide Schottky Diode;IGBT TRENCHSTO | |
IKZA50N65SS5 | INFINEON |
获取价格 |
IGBT TRENCHSTOP™ 5;Silicon Carbide Schottky D | |
IKZA75N120CH7 | INFINEON |
获取价格 |
TRENCHSTOP™ IGBT7 | |
IKZA75N65EH7 | INFINEON |
获取价格 |
Hard-switching 650 V, 75 A?TRENCHSTOP? IGBT7?H7?discrete?in TO247-4 package technology has | |
IKZA75N65RH5 | INFINEON |
获取价格 |
Silicon Carbide Schottky Diode;IGBT TRENCHSTOP? 5 | |
IKZA75N65SS5 | INFINEON |
获取价格 |
IGBT TRENCHSTOP? 5;Silicon Carbide Schottky Diode | |
IL | SCHURTER |
获取价格 |
Cost optimized pulse transformers for THT mounting |