是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | TO-247 |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 0.6 | 最大集电极电流 (IC): | 50 A |
集电极-发射极最大电压: | 1200 V | 配置: | SINGLE WITH BUILT-IN DIODE |
JEDEC-95代码: | TO-247 | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | Tin (Sn) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | POWER CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 397 ns |
标称接通时间 (ton): | 61 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IKW25N120T2 | INFINEON |
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Low Loss DuoPack : IGBT in 2nd generation TrenchStop? with soft, fast recovery anti-parall | |
IKW25T12 | INFINEON |
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IGBT TRENCHSTOP? | |
IKW25T120 | INFINEON |
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TRENCHSTOP SERIES | |
IKW25T120_08 | INFINEON |
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Low Loss DuoPack : IGBT in TrenchStop® and Fi | |
IKW30N60DTP | INFINEON |
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IGBT TRENCHSTOP? Perf. | |
IKW30N60DTPXKSA1 | INFINEON |
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Insulated Gate Bipolar Transistor, 53A I(C), 600V V(BR)CES, N-Channel, TO-247, | |
IKW30N60H3 | INFINEON |
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High speed Duopack : IGBT in Trench and Fieldstop technology | |
IKW30N60T | INFINEON |
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Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-p | |
IKW30N60TA | INFINEON |
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Insulated Gate Bipolar Transistor, | |
IKW30N65ES5 | INFINEON |
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high Speed soft switching IGBT with full current rated RAPID 1 diode |