Datasheet > IKW08T120_08

IKW08T120_08

更新时间： 2024-09-19 05:39:11

品牌	Logo	应用领域
英飞凌 - INFINEON		二极管双极性晶体管
页数	文件大小	规格书
16页	368K
描述
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

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中文翻译

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数据手册

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IKW08T120_08 数据手册

IKW08T120

TrenchStop^®Series

Low Loss DuoPack : IGBT in TrenchStop^®and Fieldstop technology

with soft, fast recovery anti-parallel EmCon HE diode

•

Approx. 1.0V reduced V_CE(sat)

and 0.5V reduced V_Fcompared to BUP305D

Short circuit withstand time – 10µs

Designed for :

•

- Frequency Converters

- Uninterrupted Power Supply

•

TrenchStop^®and Fieldstop technology for 1200 V applications

offers :

- very tight parameter distribution

PG-TO-247-3

- high ruggedness, temperature stable behavior

NPT technology offers easy parallel switching capability due to

positive temperature coefficient in V_CE(sat)

Low EMI

•

Low Gate Charge

Very soft, fast recovery anti-parallel EmCon HE diode

Qualified according to JEDEC¹for target applications

Pb-free lead plating; RoHS compliant

Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type

V_CE

I_C

V_{CE(sat),Tj=25°C}T_j,maxMarking Code

1.7V K08T120

Package

IKW08T120

1200V

PG-TO-247-3

150°C

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

V_CE

I_C

1200

DC collector current

T_C= 25°C

T_C= 100°C

Pulsed collector current, t_plimited by T_jmax

Turn off safe operating area

I_Cpuls

V_CE≤ 1200V, T_j≤ 150°C

Diode forward current

T_C= 25°C

T_C= 100°C

I_F

Diode pulsed current, t_plimited by T_jmax

Gate-emitter voltage

Short circuit withstand time²⁾

I_Fpuls

V_GE

t_SC

±20

µs

V_GE= 15V, V_CC≤ 1200V, T_j≤ 150°C

Power dissipation

P_tot

T_C= 25°C

Operating junction temperature

Storage temperature

T_j

T_stg

-40...+150

-55...+150

°C

¹J-STD-020 and JESD-022

²⁾Allowed number of short circuits: <1000; time between short circuits: >1s.

Rev. 2.3 Sep 08

Power Semiconductors

12 3 4 5 6 7...16

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