IKW03N120H2

更新时间： 2024-09-18 21:54:15

品牌	Logo	应用领域
英飞凌 - INFINEON		二极管
页数	文件大小	规格书
15页	432K
描述
HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode

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中文翻译

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数据手册

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IKW03N120H2 数据手册

IKP03N120H2,

IKW03N120H2

IKB03N120H2

HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode

•

Designed for:

- SMPS

- Lamp Ballast

- ZVS-Converter

•

2^ndgeneration HighSpeed-Technology

for 1200V applications offers:

- loss reduction in resonant circuits

- temperature stable behavior

- parallel switching capability

- tight parameter distribution

P-TO-247-3-1

(TO-247AC)

P-TO-263-3-2 (D²-PAK)

(TO-263AB)

P-TO-220-3-1

(TO-220AB)

- E_offoptimized for I_C=3A

• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type

V_CE

I_C

E_off

T_j

Package

Ordering Code

Q67040-S4595

Q67040-S4594

IKW03N120H2

IKP03N120H2

IKB03N120H2

1200V

0.15mJ

P-TO-247

150°C

150°C P-TO-220-3-1

150°C P-TO-263 (D²PAK) Q67040-S4597

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

Triangular collector current

T_C= 25°C, f = 140kHz

T_C= 100°C, f = 140kHz

V_CE

I_C

1200

9.6

3.9

Pulsed collector current, t_plimited by T_jmax

Turn off safe operating area

I_Cpuls

9.9

_CE≤ 1200V, T_j≤ 150°C

Diode forward current

I_F

9.6

3.9

T_C= 25°C

T_C= 100°C

Gate-emitter voltage

Power dissipation

V_GE

P_tot

±20

62.5

T_C= 25°C

Operating junction and storage temperature

Soldering temperature, 1.6mm (0.063 in.) from case for 10s

T_j, T_stg

-40...+150

260

°C

225 (for SMD)

Rev. 2, Mar-04

Power Semiconductors

12 3 4 5 6 7...15

中文翻译

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