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IKP20N60T_08 PDF预览

IKP20N60T_08

更新时间: 2024-11-05 11:19:27
品牌 Logo 应用领域
英飞凌 - INFINEON 双极性晶体管
页数 文件大小 规格书
14页 450K
描述
Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology

IKP20N60T_08 数据手册

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IKP20N60T  
IKW20N60T  
TrenchStop® Series  
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology  
with soft, fast recovery anti-parallel EmCon HE diode  
C
E
Very low VCE(sat) 1.5 V (typ.)  
Maximum Junction Temperature 175 °C  
Short circuit withstand time – 5µs  
Designed for :  
G
- Frequency Converters  
- Uninterrupted Power Supply  
TrenchStop® and Fieldstop technology for 600 V applications  
offers :  
PG-TO-247-3  
- very tight parameter distribution  
- high ruggedness, temperature stable behavior  
- very high switching speed  
- low VCE(sat)  
PG-TO-220-3-1  
Positive temperature coefficient in VCE(sat)  
Low EMI  
Low Gate Charge  
Very soft, fast recovery anti-parallel EmCon HE diode  
Qualified according to JEDEC1 for target applications  
Pb-free lead plating; RoHS compliant  
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/  
Type  
VCE  
IC VCE(sat),Tj=25°C  
Tj,max  
175°C  
175°C  
Marking  
K20T60  
K20T60  
Package  
IKP20N60T  
IKW20N60T  
600V 20A  
600V 20A  
1.5V  
1.5V  
PG-TO-220-3-1  
PG-TO-247-3  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
Collector-emitter voltage  
DC collector current, limited by Tjmax  
TC = 25°C  
VCE  
IC  
600  
V
A
40  
20  
TC = 100°C  
Pulsed collector current, tp limited by Tjmax  
ICpuls  
-
IF  
60  
60  
40  
20  
Turn off safe operating area (VCE 600V, Tj 175°C)  
Diode forward current, limited by Tjmax TC = 25°C  
TC = 100°C  
Diode pulsed current, tp limited by Tjmax  
Gate-emitter voltage  
IFpuls  
VGE  
tSC  
60  
±20  
5
V
Short circuit withstand time2)  
µs  
VGE = 15V, VCC 400V, Tj 150°C  
Ptot  
Tj  
Tstg  
-
166  
W
Power dissipation TC = 25°C  
Operating junction temperature  
Storage temperature  
Soldering temperature, 1.6mm (0.063 in.) from case for 10s  
-40...+175  
-55...+175  
260  
°C  
1 J-STD-020 and JESD-022  
2) Allowed number of short circuits: <1000; time between short circuits: >1s.  
1
Rev. 2.5 Sep. 08  
Power Semiconductors  

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