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IKP15N60T_07 PDF预览

IKP15N60T_07

更新时间: 2024-11-06 11:19:27
品牌 Logo 应用领域
英飞凌 - INFINEON 双极性晶体管
页数 文件大小 规格书
14页 455K
描述
Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology

IKP15N60T_07 数据手册

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IKP15N60T  
q
TrenchStop® Series  
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology  
with soft, fast recovery anti-parallel EmCon HE diode  
C
E
Very low VCE(sat) 1.5 V (typ.)  
Maximum Junction Temperature 175 °C  
Short circuit withstand time – 5µs  
Designed for :  
G
- Frequency Converters  
- Uninterrupted Power Supply  
TrenchStop® and Fieldstop technology for 600 V applications  
offers :  
- very tight parameter distribution  
- high ruggedness, temperature stable behavior  
- very high switching speed  
PG-TO-220-3-1  
Positive temperature coefficient in VCE(sat)  
Low EMI  
Pb-free lead plating; RoHS compliant  
Very soft, fast recovery anti-parallel EmCon HE diode  
Qualified according to JEDEC1 for target applications  
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/  
Type  
VCE  
IC  
VCE(sat),Tj=25°C  
Tj,max  
Marking Code  
Package  
IKP15N60T  
600V 15A  
1.5V  
K15T60  
PG-TO-220-3-1  
175°C  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
Collector-emitter voltage  
DC collector current, limited by Tjmax  
TC = 25°C  
VCE  
IC  
600  
V
A
30  
15  
TC = 100°C  
Pulsed collector current, tp limited by Tjmax  
ICpul s  
-
IF  
45  
45  
Turn off safe operating area (VCE 600V, Tj 175°C)  
Diode forward current, limited by Tjmax  
TC = 25°C  
30  
15  
TC = 100°C  
Diode pulsed current, tp limited by Tjmax  
Gate-emitter voltage  
IFpul s  
VG E  
tSC  
45  
±20  
5
V
Short circuit withstand time2)  
µs  
VGE = 15V, VCC 400V, Tj 150°C  
Pt ot  
Tj  
Tstg  
130  
W
Power dissipation TC = 25°C  
Operating junction temperature  
Storage temperature  
-40...+175  
-55...+175  
260  
°C  
Soldering temperature  
wavesoldering, 1.6 mm (0.063 in.) from case for 10s  
1 J-STD-020 and JESD-022  
2) Allowed number of short circuits: <1000; time between short circuits: >1s.  
1
Rev. 2.2 Sep. 07  
Power Semiconductors  

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