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IKP15N60T

更新时间： 2024-09-16 03:43:59
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体二极管晶体管功率控制双极性晶体管栅局域网
页数 文件大小 规格书
13页 402K
描述
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

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中文翻译

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IKP15N60T 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Active零件包装代码：TO-220AB
包装说明：FLANGE MOUNT, R-PSFM-T3针数：3
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：0.9Is Samacsys：N
其他特性：HIGH SPEED外壳连接：COLLECTOR
最大集电极电流 (IC)：30 A集电极-发射极最大电压：600 V
配置：SINGLE WITH BUILT-IN DIODE门极发射器阈值电压最大值：5.7 V
门极-发射极最大电压：20 VJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
元件数量：1端子数量：3
最高工作温度：175 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：130 W认证状态：Not Qualified
子类别：Insulated Gate BIP Transistors表面贴装：NO
端子面层：Matte Tin (Sn)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：POWER CONTROL晶体管元件材料：SILICON
标称断开时间 (toff)：291 ns标称接通时间 (ton)：32 ns
Base Number Matches：1

IKP15N60T 数据手册

 浏览型号IKP15N60T的Datasheet PDF文件第2页浏览型号IKP15N60T的Datasheet PDF文件第3页浏览型号IKP15N60T的Datasheet PDF文件第4页浏览型号IKP15N60T的Datasheet PDF文件第5页浏览型号IKP15N60T的Datasheet PDF文件第6页浏览型号IKP15N60T的Datasheet PDF文件第7页 
IKP15N60T  
q
TrenchStop Series  
Low Loss DuoPack : IGBT in Trench and Fieldstop technology  
with soft, fast recovery anti-parallel EmCon HE diode  
C
E
•
•
•
•
Very low VCE(sat) 1.5 V (typ.)  
Maximum Junction Temperature 175 °C  
Short circuit withstand time – 5µs  
G
Designed for :  
- Frequency Converters  
- Uninterrupted Power Supply  
•
Trench and Fieldstop technology for 600 V applications offers :  
- very tight parameter distribution  
- high ruggedness, temperature stable behavior  
- very high switching speed  
Positive temperature coefficient in VCE(sat)  
Low EMI  
PG-TO-220-3-1  
•
•
•
•
•
•
Pb-free lead plating; RoHS compliant  
Very soft, fast recovery anti-parallel EmCon HE diode  
Qualified according to JEDEC1 for target applications  
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/  
Type  
VCE  
IC  
VCE(sat),Tj=25°C  
Tj,max  
Marking Code  
Package  
IKP15N60T  
600V 15A  
1.5V  
K15T60  
PG-TO-220-3-1  
175°C  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
Collector-emitter voltage  
DC collector current, limited by Tjmax  
TC = 25°C  
VCE  
IC  
600  
V
A
30  
15  
TC = 100°C  
Pulsed collector current, tp limited by Tjmax  
ICpul s  
-
IF  
45  
45  
Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C)  
Diode forward current, limited by Tjmax  
TC = 25°C  
30  
15  
TC = 100°C  
Diode pulsed current, tp limited by Tjmax  
Gate-emitter voltage  
IFpul s  
VG E  
tSC  
45  
±20  
5
V
Short circuit withstand time2)  
µs  
VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C  
Pt ot  
Tj  
Tstg  
130  
W
Power dissipation TC = 25°C  
Operating junction temperature  
Storage temperature  
-40...+175  
-55...+175  
260  
°C  
Soldering temperature  
wavesoldering, 1.6 mm (0.063 in.) from case for 10s  
1 J-STD-020 and JESD-022  
2) Allowed number of short circuits: <1000; time between short circuits: >1s.  
1
Rev. 2.1 May 06  
Power Semiconductors  
1234567...13

中文翻译

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