Datasheet > IKP04N60T_09

IKP04N60T_09

更新时间： 2024-09-16 11:19:27

品牌	Logo	应用领域
英飞凌 - INFINEON		双极性晶体管
页数	文件大小	规格书
14页	562K
描述
Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology

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中文翻译

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数据手册

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IKP04N60T_09 数据手册

IKP04N60T

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TrenchStop^®Series

Low Loss DuoPack : IGBT in TrenchStop^®and Fieldstop technology

with soft, fast recovery anti-parallel EmCon HE diode

Very low V_CE(sat)1.5 V (typ.)

•

Maximum Junction Temperature 175 °C

Short circuit withstand time – 5μs

Designed for :

- Frequency Converters

- Drives

•

TrenchStop^®and Fieldstop technology for 600 V applications

offers :

- very tight parameter distribution

- high ruggedness, temperature stable behavior

- very high switching speed

PG-TO-262-3

PG-TO-220-3-1

- low V_CE(sat)

•

Positive temperature coefficient in V_CE(sat)

Low EMI

Low Gate Charge

Very soft, fast recovery anti-parallel EmCon HE diode

Qualified according to JEDEC¹for target applications

Pb-free lead plating; RoHS compliant

Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type

V_CE

I_C

V_{CE(sat),Tj=25°C}T_j,max

Marking

K04T60

Package

IKP04N60T

IKI04N60T

600 V

4 A

1.5 V

PG-TO-220-3-1

PG-TO-262-3

175 °C

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

V_CE

I_C

600

DC collector current, limited by T_jmax

T_C= 25°C

T_C= 100°C

Pulsed collector current, t_plimited by T_jmax

I_Cpuls

Turn off safe operating area (V_CE≤ 600V, T_j≤ 175°C)

Diode forward current, limited by T_jmax

T_C= 25°C

I_F

T_C= 100°C

Diode pulsed current, t_plimited by T_jmax

I_Fpuls

V_GE

t_SC

±20

Gate-emitter voltage

Short circuit withstand time²⁾

V_GE= 15V, V_CC≤ 400V, T_j≤ 150°C

Power dissipation T_C= 25°C

Operating junction temperature

Storage temperature

μs

P_tot

T_j

-40...+175

-55...+175

260

°C

T_stg

Soldering temperature, 1.6mm (0.063 in.) from case for 10s

¹J-STD-020 and JESD-022

²⁾Allowed number of short circuits: <1000; time between short circuits: >1s.

Rev. 2.5 Feb. 09

Power Semiconductors

12 3 4 5 6 7...14

中文翻译

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与IKP04N60T_09相关器件

型号	品牌	获取价格	描述	数据表
IKP04N60TXKSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-220AB, GREEN, PLA
IKP06N60T	INFINEON	获取价格	Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-p
IKP06N60T_07	INFINEON	获取价格	Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology
IKP06N60TXKSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES, N-Channel, TO-220AB, GREEN, PL
IKP08N65F5	INFINEON	获取价格	650V DuoPack IGBT and Diode High speed switching series fifth generation
IKP08N65H5	INFINEON	获取价格	650V DuoPack IGBT and Diode High speed switching series fifth generation
IKP10N60T	INFINEON	获取价格	Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-p
IKP10N60T_07	INFINEON	获取价格	TrenchStop Series
IKP10N60THKSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB, GREEN, PL
IKP10N60TXKSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB, GREEN, PL

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