Datasheet > IKD06N65ET6

IKD06N65ET6

更新时间： 2024-11-19 14:56:19

品牌	Logo	应用领域
英飞凌 - INFINEON		双极性晶体管
页数	文件大小	规格书
16页	3090K
描述
IGBT TRENCHSTOP? 6

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中文翻译

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数据手册

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IKD06N65ET6 数据手册

IKD06N65ET6

TRENCHSTOP™ꢀIGBT6

IGBTꢀinꢀtrenchꢀandꢀfield-stopꢀtechnologyꢀwithꢀsoft,ꢀfastꢀrecoveryꢀanti-parallel

Rapidꢀdiode

ꢀ

FeaturesꢀandꢀBenefits:

•ꢀVeryꢀlowꢀV_CE(sat)ꢀ1.5Vꢀ(typ.)

•ꢀMaximumꢀjunctionꢀtemperatureꢀ175°C

•ꢀShortꢀcircuitꢀwithstandꢀtimeꢀ3µs

Trenchꢀandꢀfield-stopꢀtechnologyꢀforꢀ650Vꢀapplicationsꢀoffersꢀ:

ꢀꢀꢀ•ꢀveryꢀtightꢀparameterꢀdistribution

ꢀꢀꢀ•ꢀhighꢀruggedness,ꢀtemperatureꢀstableꢀbehavior

ꢀꢀꢀ•ꢀlowꢀV_CEsatꢀandꢀpositiveꢀtemperatureꢀcoefficient

•ꢀLowꢀgateꢀchargeꢀQ_G

•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant

•ꢀVeryꢀsoft,ꢀfastꢀrecoveryꢀanti-parallelꢀRapidꢀdiode

•ꢀCompleteꢀproductꢀspectrumꢀandꢀPLECSꢀModels:

www.infineon.com/igbt

PotentialꢀApplications:

Drives

ꢀꢀ•ꢀGPDꢀ(generalꢀpurposeꢀdrives)

Majorꢀhomeꢀappliances

ꢀꢀ•ꢀAirꢀconditioning

ꢀꢀ•ꢀOtherꢀmajorꢀhomeꢀappliances

Smallꢀhomeꢀappliances

ꢀꢀ•ꢀOtherꢀsmallꢀhomeꢀappliances

ProductꢀValidation:

Qualifiedꢀforꢀindustrialꢀapplicationsꢀaccordingꢀto

theꢀrelevantꢀtestsꢀofꢀJEDEC47/20/22

KeyꢀPerformanceꢀandꢀPackageꢀParameters

Type

V_CE

I_C

V_CEsat,ꢀT_vj=25°C T_vjmax

1.5V 175°C

Marking

Package

IKD06N65ET6

650V

K06EET6

PG-TO252-3

Datasheet

www.infineon.com

PleaseꢀreadꢀtheꢀImportantꢀNoticeꢀandꢀWarningsꢀatꢀtheꢀendꢀofꢀthisꢀdocument

Vꢀ2.2

2020-04-20

12 3 4 5 6 7...16

中文翻译

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