Datasheet > IK2312D0T

IK2312D0T

更新时间： 2022-02-26 12:46:42

品牌	Logo	应用领域
IKSEMICON		驱动
页数	文件大小	规格书
8页	690K
描述
HIGH-VOLTAGE LED DRIVER WITH BUILT-IN MOSFET SWITCH

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IK2312D0T 数据手册

IK2312

TYPICAL APPLICATION DIAGRAM

Figure 2.

FUNCTIONAL DESCRIPTION

When the input voltage of 20 to 400 V appears at the DRAIN pin, the internal high-

voltage linear regulator seeks to maintain a voltage of 7 VDC at the VDD pin. Until this

voltage exceeds the internally programmed under-voltage threshold, the output DRAIN is

non-conductive. When the threshold is exceeded, the DRAIN turns on. The input current

begins to flow into the DRAIN pin. Hysteresis is provided in the under-voltage comparator

to prevent oscillation. The current through the switching MOSFET source is averaged.

When the average current exceeds the internal calculated level, control logic resets an RS

flip-flop, and the DRAIN turns off. At the same time, a one-shot circuit is activated that

determines the duration of the off-state (10.5 μS type). As soon as this time is over, the

flip-flop sets again. The new switching cycle begins. A “blanking” delay of 300 nS is

provided that prevents false triggering of the current sense comparator due to the leading

edge spike caused by circuit parasitic.

The constant-current control feedback derives the average current signal from the

source current of the switching MOSFET. This current is detected using a sense resistor at

the RSENSE pin. The feedback operates in a fast open-loop mode. No compensation is

required.

The above equation is only valid for continuous conduction of the output inductor. It is

a good practice to design the inductor such that the switching ripple current in it is 30~40%

of its average full load DC current peak-to-peak. Hence, the recommended inductance can

be calculated as:

L = (T_OFF(MAX)•V_O) / (0.4 •I_LED

)

2015. June. Ver. 02

1 2 3 456 7 8

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