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IIRLR8259 PDF预览

IIRLR8259

更新时间: 2024-11-07 01:18:19
品牌 Logo 应用领域
无锡固电 - ISC /
页数 文件大小 规格书
2页 335K
描述
N-Channel MOSFET Transistor

IIRLR8259 数据手册

 浏览型号IIRLR8259的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc N-Channel MOSFET Transistor  
IRLR8259, IIRLR8259  
·FEATURES  
·Static drain-source on-resistance:  
RDS(on)8.7m  
·Enhancement mode:  
·100% avalanche tested  
·Minimum Lot-to-Lot variations for robust device  
performance and reliable operation  
·DESCRITION  
·High Frequency Synchronous Buck Converters For Computer  
Processor Power  
·ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VDSS  
VGS  
ID  
PARAMETER  
VALUE  
25  
UNIT  
V
Drain-Source Voltage  
Gate-Source Voltage  
±20  
57  
V
Drain Current-Continuous  
Drain Current-Single Pulsed  
Total Dissipation @TC=25℃  
Max. Operating Junction Temperature  
Storage Temperature  
A
IDM  
230  
A
PD  
48  
W
175  
Tj  
-55~175  
Tstg  
·THERMAL CHARACTERISTICS  
SYMBOL  
Rth(j-c)  
PARAMETER  
MAX  
UNIT  
/W  
/W  
Channel-to-case thermal resistance  
Channel-to-ambient thermal resistance  
3.15  
110  
Rth(j-a)  
1
isc websitewww.iscsemi.cn  
isc & iscsemi is registered trademark  

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